Poly-4-vinylphenol (PVP) and Poly(melamine-co-formaldehyde) (PMF)-Based Atomic Switching Device and Its Application to Logic Gate Circuits with Low Operating Voltage

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dc.contributor.authorKang, Dong-Hoko
dc.contributor.authorChoi, Woo-Youngko
dc.contributor.authorWoo, Hyunsukko
dc.contributor.authorJang, Sungkyuko
dc.contributor.authorPark, Hyung-Youlko
dc.contributor.authorShim, Jaewooko
dc.contributor.authorChoi, Jae-Woongko
dc.contributor.authorKim, Sunghoko
dc.contributor.authorJeon, Sanghunko
dc.contributor.authorLee, Sungjooko
dc.contributor.authorPark, Jin-Hongko
dc.date.accessioned2018-03-21T02:52:39Z-
dc.date.available2018-03-21T02:52:39Z-
dc.date.created2018-03-07-
dc.date.created2018-03-07-
dc.date.issued2017-08-
dc.identifier.citationACS APPLIED MATERIALS & INTERFACES, v.9, no.32, pp.27073 - 27082-
dc.identifier.issn1944-8244-
dc.identifier.urihttp://hdl.handle.net/10203/240746-
dc.description.abstractIn this study, we demonstrate a high-performance solid polymer electrolyte (SPE) atomic switching device with low SET/RESET voltages (0.25 and -0.5 V, respectively), high on/off-current ratio (10(5)), excellent cyclic endurance (>10(3)), and long retention time (>10(4) s), where poly-4-vinylphenol (PVP)/poly(rnelamine-co-formaldehyde) (PMF) is used as an SPE layer. To accomplish these excellent device performance parameters, we reduce the off-current level of the PVP/PMF atomic switching device by improving, the electrical insulating property of the PVP/PMF electrolyte through adjustment of the number of cross-linked chains. We then apply a titanium buffer layer to the PVP/PMF switching device for further improvement of bipolar switching behavior and device stability. In addition, we first implement SPE atomic switch-based logic AND and OR circuits with low operating voltages below 2 V by integrating 5 X 5 arrays of PVP/PMF switching devices on the flexible substrate. In particular, this low operating voltage of our logic circuits was much lower than that (>5 V), of the circuits configured by polymer resistive random access memory. This research successfully presents the feasibility of PVP/PMF atomic switches for flexible integrated circuits for next generation electronic applications.-
dc.languageEnglish-
dc.publisherAMER CHEMICAL SOC-
dc.subjectNONVOLATILE MEMORY-
dc.subjectTHIN-FILMS-
dc.subjectELECTROLYTES-
dc.subjectRETENTION-
dc.subjectMECHANISM-
dc.titlePoly-4-vinylphenol (PVP) and Poly(melamine-co-formaldehyde) (PMF)-Based Atomic Switching Device and Its Application to Logic Gate Circuits with Low Operating Voltage-
dc.typeArticle-
dc.identifier.wosid000408178400047-
dc.identifier.scopusid2-s2.0-85027414416-
dc.type.rimsART-
dc.citation.volume9-
dc.citation.issue32-
dc.citation.beginningpage27073-
dc.citation.endingpage27082-
dc.citation.publicationnameACS APPLIED MATERIALS & INTERFACES-
dc.identifier.doi10.1021/acsami.7b07549-
dc.contributor.localauthorJeon, Sanghun-
dc.contributor.nonIdAuthorKang, Dong-Ho-
dc.contributor.nonIdAuthorChoi, Woo-Young-
dc.contributor.nonIdAuthorWoo, Hyunsuk-
dc.contributor.nonIdAuthorJang, Sungkyu-
dc.contributor.nonIdAuthorPark, Hyung-Youl-
dc.contributor.nonIdAuthorShim, Jaewoo-
dc.contributor.nonIdAuthorChoi, Jae-Woong-
dc.contributor.nonIdAuthorKim, Sungho-
dc.contributor.nonIdAuthorLee, Sungjoo-
dc.contributor.nonIdAuthorPark, Jin-Hong-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle-
dc.subject.keywordAuthoratomic switch-
dc.subject.keywordAuthorPVP/PMF-
dc.subject.keywordAuthormetal buffer-
dc.subject.keywordAuthorlow-voltage device-
dc.subject.keywordAuthorlow-voltage circuit-
dc.subject.keywordPlusNONVOLATILE MEMORY-
dc.subject.keywordPlusTHIN-FILMS-
dc.subject.keywordPlusELECTROLYTES-
dc.subject.keywordPlusRETENTION-
dc.subject.keywordPlusMECHANISM-
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