Spin torque nano-oscillators directly integrated on a MOSFET

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We propose spin torque nano-oscillators (STNOs) directly integrated on a metal-oxide-semiconductor field-effect-transistor (MOSFET). In this model, we consider an array of STNOs, where the STNOs are synchronized via magnetodipolar interaction. We found that the ac voltage generated by magnetization precession of STNOs directly integrated on a MOSFET can be amplified by the normally-on MOSFET. We also found that the load resistance plays an important role with respect to increasing the output voltage of synchronized STNOs compared to a single STNO and in relation to the gate voltage of the MOSFET. By using numerical calculation, we found that the emitted microwave power is greatly enhanced by amplifying the ac voltage generated by synchronized STNOs. It is anticipated that the results will be verified with existing experimental techniques.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2018-01
Language
English
Article Type
Article
Keywords

MAGNETIC TUNNEL-JUNCTIONS; POLARIZED CURRENT; MICROWAVE GENERATION; CO/CU/CO PILLARS; PHASE-LOCKING; DRIVEN; SYNCHRONIZATION; MULTILAYER; EXCITATION; EMISSION

Citation

IEEE TRANSACTIONS ON NANOTECHNOLOGY, v.17, no.1, pp.122 - 127

ISSN
1536-125X
DOI
10.1109/TNANO.2017.2777505
URI
http://hdl.handle.net/10203/240115
Appears in Collection
EE-Journal Papers(저널논문)
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