High-Performance Inp-based HEMT's with a Graded Pseudomorphic Channel

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dc.contributor.authorChough, K.B-
dc.contributor.authorHong, B.W-p-
dc.contributor.authorCaneau, C.-
dc.contributor.authorSong, J. I-
dc.contributor.authorJeon, K.I-
dc.contributor.authorHong, S. C-
dc.contributor.authorLee, Kwyro-
dc.date.accessioned2011-06-02T05:36:46Z-
dc.date.available2011-06-02T05:36:46Z-
dc.date.created2012-02-06-
dc.date.issued1993-
dc.identifier.citationProc. of Internation Electron Device Meeting, v., no., pp.229 - 232-
dc.identifier.urihttp://hdl.handle.net/10203/24001-
dc.description.sponsorshipThe authors would like to thank Dr.R.Bhat for invaluable discussions. This work was supported in part by the Wright-Patterson Air Force Base under contract #F33615-91-C-1793.en
dc.languageENG-
dc.language.isoen_USen
dc.publisherIEEE-
dc.titleHigh-Performance Inp-based HEMT's with a Graded Pseudomorphic Channel-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.beginningpage229-
dc.citation.endingpage232-
dc.citation.publicationnameProc. of Internation Electron Device Meeting-
dc.identifier.conferencecountryUnited States-
dc.contributor.localauthorLee, Kwyro-
dc.contributor.nonIdAuthorChough, K.B-
dc.contributor.nonIdAuthorHong, B.W-p-
dc.contributor.nonIdAuthorCaneau, C.-
dc.contributor.nonIdAuthorSong, J. I-
dc.contributor.nonIdAuthorJeon, K.I-
dc.contributor.nonIdAuthorHong, S. C-

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