Large Electroabsorption Susceptibility Mediated by Internal Photoconductive Gain in Ge Nanowires

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dc.contributor.authorLee, Hyun-Seungko
dc.contributor.authorKim, Cheol-Jooko
dc.contributor.authorLee, Donghunko
dc.contributor.authorLee, Ru Riko
dc.contributor.authorKang, Kibumko
dc.contributor.authorHwang, Inchanko
dc.contributor.authorJo, Moon-Hoko
dc.date.accessioned2018-01-30T04:23:31Z-
dc.date.available2018-01-30T04:23:31Z-
dc.date.created2018-01-09-
dc.date.created2018-01-09-
dc.date.issued2012-11-
dc.identifier.citationNANO LETTERS, v.12, no.11, pp.5913 - 5918-
dc.identifier.issn1530-6984-
dc.identifier.urihttp://hdl.handle.net/10203/238878-
dc.description.abstractLarge spectral modulation in the photon-to-electron conversion near the absorption band-edge of semiconductor by an applied electrical field can be a basis for efficient electro-optical modulators. This electro-absorption effect in Group IV semiconductors is, however, inherently weak, and this poses the technological challenges for their electro-photonic integration. Here we report unprecedentedly large electro-absorption susceptibility at the direct band-edge of intrinsic Ge nanowire (NW) photodetectors, which strongly diameter-dependent. We provide evidence that the large spectral shift at the 1.55 mu m wavelength, enhanced up to 20 times larger than Ge bulk crystals, is attributed to the internal Franz-Keldysh effect across the NW surface field of similar to 10(5) V/cm, mediated by the strong photoconductive gain. This classical size-effect operating at the nanometer scale is universal, regardless of the choice of materials, and thus suggests general implications for the monolithic integration of Group IV photonic circuits.-
dc.languageEnglish-
dc.publisherAMER CHEMICAL SOC-
dc.subjectFRANZ-KELDYSH-
dc.subjectELECTRIC-FIELD-
dc.subjectOPTICAL MODULATORS-
dc.subjectABSORPTION EDGE-
dc.subjectQUANTUM DOTS-
dc.subjectWAVE-GUIDE-
dc.subjectGERMANIUM-
dc.subjectSILICON-
dc.subjectPHOTODETECTORS-
dc.subjectDEPENDENCE-
dc.titleLarge Electroabsorption Susceptibility Mediated by Internal Photoconductive Gain in Ge Nanowires-
dc.typeArticle-
dc.identifier.wosid000311244400081-
dc.identifier.scopusid2-s2.0-84869158047-
dc.type.rimsART-
dc.citation.volume12-
dc.citation.issue11-
dc.citation.beginningpage5913-
dc.citation.endingpage5918-
dc.citation.publicationnameNANO LETTERS-
dc.identifier.doi10.1021/nl3033203-
dc.contributor.localauthorKang, Kibum-
dc.contributor.nonIdAuthorLee, Hyun-Seung-
dc.contributor.nonIdAuthorKim, Cheol-Joo-
dc.contributor.nonIdAuthorLee, Donghun-
dc.contributor.nonIdAuthorLee, Ru Ri-
dc.contributor.nonIdAuthorHwang, Inchan-
dc.contributor.nonIdAuthorJo, Moon-Ho-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorElectro-optical modulation-
dc.subject.keywordAuthorphotoconductive gain-
dc.subject.keywordAuthorphotodetector-
dc.subject.keywordAuthorGroup IV photonics-
dc.subject.keywordAuthorGe nanowires-
dc.subject.keywordAuthorFranz-Keldysh effect-
dc.subject.keywordPlusFRANZ-KELDYSH-
dc.subject.keywordPlusELECTRIC-FIELD-
dc.subject.keywordPlusOPTICAL MODULATORS-
dc.subject.keywordPlusABSORPTION EDGE-
dc.subject.keywordPlusQUANTUM DOTS-
dc.subject.keywordPlusWAVE-GUIDE-
dc.subject.keywordPlusGERMANIUM-
dc.subject.keywordPlusSILICON-
dc.subject.keywordPlusPHOTODETECTORS-
dc.subject.keywordPlusDEPENDENCE-
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