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College of Engineering(공과대학)School of Electrical Engineering(전기및전자공학부)EE-Conference Papers(학술회의논문)

A Comprehensive Study of Hot-Carrier Behaviors with Consideration of Non-Local, Series Resistance, Quantum, and Temperature Effects in Multi-Gate FinFETs

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dc.contributor.authorHan, Jin-Woo-
dc.contributor.authorPark, Donggun-
dc.contributor.authorChoi, Yang-Kyu-
dc.date.accessioned2011-05-24T08:58:26Z-
dc.date.available2011-05-24T08:58:26Z-
dc.date.created2012-02-06-
dc.date.issued2007-09-
dc.identifier.citationInternational Conference on Solid State Device and Materials, v., no., pp.458 - 459-
dc.identifier.urihttp://hdl.handle.net/10203/23875-
dc.description.sponsorshipSamsung Electronics Co., Ltd.en
dc.languageENG-
dc.language.isoen_USen
dc.publisherJapan society of applied physics-
dc.titleA Comprehensive Study of Hot-Carrier Behaviors with Consideration of Non-Local, Series Resistance, Quantum, and Temperature Effects in Multi-Gate FinFETs-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.beginningpage458-
dc.citation.endingpage459-
dc.citation.publicationnameInternational Conference on Solid State Device and Materials-
dc.identifier.conferencecountryJapan-
dc.identifier.conferencecountryJapan-
dc.contributor.localauthorChoi, Yang-Kyu-
dc.contributor.nonIdAuthorHan, Jin-Woo-
dc.contributor.nonIdAuthorPark, Donggun-
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EE-Conference Papers(학술회의논문)

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