Ferroelectric thin films with nano-grain structure for terabit storage devices
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | S. Buehlmann | ko |
| dc.contributor.author | HONG, DANIEL SEUNGBUM | ko |
| dc.contributor.author | Y. K. Kim | ko |
| dc.contributor.author | Y.-W. Nam | ko |
| dc.contributor.author | A. Tikhonovsky | ko |
| dc.contributor.author | K. Kim | ko |
| dc.contributor.author | Y. Kim | ko |
| dc.contributor.author | J. Kim | ko |
| dc.contributor.author | K. No | ko |
| dc.contributor.author | S.-H. Choa | ko |
| dc.date.accessioned | 2018-01-30T03:56:57Z | - |
| dc.date.available | 2018-01-30T03:56:57Z | - |
| dc.date.created | 2017-12-29 | - |
| dc.date.issued | 2007-08 | - |
| dc.identifier.citation | Samsung Journal of Innovative Technology | - |
| dc.identifier.uri | http://hdl.handle.net/10203/238736 | - |
| dc.language | English | - |
| dc.publisher | Samsung | - |
| dc.title | Ferroelectric thin films with nano-grain structure for terabit storage devices | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.publicationname | Samsung Journal of Innovative Technology | - |
| dc.identifier.conferencecountry | KO | - |
| dc.contributor.localauthor | HONG, DANIEL SEUNGBUM | - |
| dc.contributor.nonIdAuthor | S. Buehlmann | - |
| dc.contributor.nonIdAuthor | Y. K. Kim | - |
| dc.contributor.nonIdAuthor | Y.-W. Nam | - |
| dc.contributor.nonIdAuthor | A. Tikhonovsky | - |
| dc.contributor.nonIdAuthor | K. Kim | - |
| dc.contributor.nonIdAuthor | Y. Kim | - |
| dc.contributor.nonIdAuthor | J. Kim | - |
| dc.contributor.nonIdAuthor | K. No | - |
| dc.contributor.nonIdAuthor | S.-H. Choa | - |
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