2D Topological Insulators with Tunable Band Gaps and Edge States in 1T’-MoX2 (X = S, Se, Te) Nanoribbons
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Sung, Ha-Jun | ko |
| dc.contributor.author | Chang, Kee Joo | ko |
| dc.contributor.author | Choe, Duk-Hyun | ko |
| dc.date.accessioned | 2018-01-30T02:53:53Z | - |
| dc.date.available | 2018-01-30T02:53:53Z | - |
| dc.date.created | 2017-12-25 | - |
| dc.date.issued | 2017-11 | - |
| dc.identifier.citation | The 4th International Conference on Advanced Electromaterials | - |
| dc.identifier.uri | http://hdl.handle.net/10203/238320 | - |
| dc.language | English | - |
| dc.publisher | KIEEME | - |
| dc.title | 2D Topological Insulators with Tunable Band Gaps and Edge States in 1T’-MoX2 (X = S, Se, Te) Nanoribbons | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.publicationname | The 4th International Conference on Advanced Electromaterials | - |
| dc.identifier.conferencecountry | KO | - |
| dc.identifier.conferencelocation | Ramada Plaza Jeju Hotel | - |
| dc.contributor.localauthor | Chang, Kee Joo | - |
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