Unlimited layer-by-layer oxidation of HfS2 for HfS2/HfO2 hybrid structure : A first-principles study
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Byeon, Seongjae | ko |
| dc.contributor.author | LEE, JUHO | ko |
| dc.contributor.author | Kim, Yong-Hoon | ko |
| dc.date.accessioned | 2018-01-30T02:48:11Z | - |
| dc.date.available | 2018-01-30T02:48:11Z | - |
| dc.date.created | 2017-12-27 | - |
| dc.date.issued | 2017-11-06 | - |
| dc.identifier.citation | the 4th International Symposium on Hybrid Materials and Processing | - |
| dc.identifier.uri | http://hdl.handle.net/10203/238283 | - |
| dc.language | English | - |
| dc.publisher | GLOBAL FRONTIER R&D Center for Hybrid Interface Materials | - |
| dc.title | Unlimited layer-by-layer oxidation of HfS2 for HfS2/HfO2 hybrid structure : A first-principles study | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.publicationname | the 4th International Symposium on Hybrid Materials and Processing | - |
| dc.identifier.conferencecountry | KO | - |
| dc.identifier.conferencelocation | Haeundae Grand Hotel, Busan | - |
| dc.contributor.localauthor | Kim, Yong-Hoon | - |
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