Method for making n-type semiconductor diamondN-형 반도체 다이아몬드의 제조방법
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Yu, Jin | ko |
| dc.contributor.author | Lee, Woong Sun | ko |
| dc.contributor.author | Kim, Jung Keun | ko |
| dc.date.accessioned | 2017-12-20T12:30:41Z | - |
| dc.date.available | 2017-12-20T12:30:41Z | - |
| dc.date.issued | 2000-08-01 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/235911 | - |
| dc.description.abstract | A method for making n-type semiconducting diamond by use of CVD in which n-type impurities are doped simultaneously with the deposition of diamond. As the n-type impurities, an Li compound and a B compound, both, are used at once. After doping, a diamond film thus obtained is etched to peel off its surface. The n-type semiconducting diamond is superior in specific resistivity, 10.sup.-2 .OMEGA.cm or less. | - |
| dc.title | Method for making n-type semiconductor diamond | - |
| dc.title.alternative | N-형 반도체 다이아몬드의 제조방법 | - |
| dc.type | Patent | - |
| dc.type.rims | PAT | - |
| dc.contributor.localauthor | Yu, Jin | - |
| dc.contributor.nonIdAuthor | Lee, Woong Sun | - |
| dc.contributor.nonIdAuthor | Kim, Jung Keun | - |
| dc.contributor.assignee | KAIST | - |
| dc.identifier.iprsType | 특허 | - |
| dc.identifier.patentApplicationNumber | 09028763 | - |
| dc.identifier.patentRegistrationNumber | 6110276 | - |
| dc.date.application | 1998-02-24 | - |
| dc.date.registration | 2000-08-01 | - |
| dc.publisher.country | US | - |
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