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College of Engineering(공과대학)Dept. of Nuclear and Quantum Engineering(원자력및양자공학과)NE-Journal Papers(저널논문)

Discrimination of the Substrate-Induced Artifact from the Photoluminescence Peak of Heavily Doped GaAs

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dc.contributor.authorLEE, Nam-Youngko
dc.contributor.authorKim, Jae Eunko
dc.contributor.authorPark, Hae Yongko
dc.contributor.authorKWAK, Dong-Hwako
dc.contributor.authorLEE, Hee-Chulko
dc.contributor.authorLIM, H.ko
dc.date.accessioned2011-05-11T06:20:29Z-
dc.date.available2011-05-11T06:20:29Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued1997-04-
dc.identifier.citationJOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.30, no.2, pp.221 - 224-
dc.identifier.issn0374-4884-
dc.identifier.urihttp://hdl.handle.net/10203/23572-
dc.description.abstractWe have studied the temperature-dependent behavior of the photoluminescence (PL) peak known to be due to the donor-acceptor (DA) pail recombination in heavily Si-doped GaAs. In some cases, the 1.49-eV PL peak is observed to appear up to much higher temperature than a normal DA peak is. The temperature dependence of this peak energy is very similar to that of the band-gap energy. From this fact, it is pointed out that this abnormal PL peak must be an artifact due to the remaining spectral region of the PL spectrum after the PL Light is absorbed in the epilayers and the substrate, between which it travels back and forth.-
dc.description.sponsorshipThis work was supported in part by the Semiconductor Physics Research Center at Jeonbuk National University.en
dc.languageKorean-
dc.language.isoen_USen
dc.publisherKorean Physical Soc-
dc.subjectEPITAXIAL GAAS-
dc.subjectTEMPERATURE-
dc.subjectCARBON-
dc.titleDiscrimination of the Substrate-Induced Artifact from the Photoluminescence Peak of Heavily Doped GaAs-
dc.typeArticle-
dc.identifier.wosidA1997WU18100011-
dc.type.rimsART-
dc.citation.volume30-
dc.citation.issue2-
dc.citation.beginningpage221-
dc.citation.endingpage224-
dc.citation.publicationnameJOURNAL OF THE KOREAN PHYSICAL SOCIETY-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.contributor.localauthorKim, Jae Eun-
dc.contributor.localauthorPark, Hae Yong-
dc.contributor.nonIdAuthorLEE, Nam-Young-
dc.contributor.nonIdAuthorKWAK, Dong-Hwa-
dc.contributor.nonIdAuthorLEE, Hee-Chul-
dc.contributor.nonIdAuthorLIM, H.-
dc.type.journalArticleArticle-
dc.subject.keywordPlusEPITAXIAL GAAS-
dc.subject.keywordPlusTEMPERATURE-
dc.subject.keywordPlusCARBON-
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