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Effects of Bottom Polysilicon Doping on the Reliability of Interpoly Oxide Grown by Using Electron Cyclotron Resonance N2O-Plasma N-I Lee; J-W Lee; S-H Hur; H-S Kim; C-H Han, JAPANESE JOURNAL OF APPLIED PHYSICS, v.37, no.3B, pp.1125 - 1128, 1998-01 |
Endurance characteristics and degradation mechanism of polysilicon thin film transistor EEPROMs with electron cyclotron resonance NaO-plasma gate oxide Lee, NI; Lee, JW; Han, Chul-Hi, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.38, no.4B, pp.2215 - 2218, 1999-04 |
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