Showing results 1 to 5 of 5
Measurement of carrier generation lifetime in SOI devices Shin, Hyung-Cheol; Racanelli, M; Huang, WM; Foerstner, J; Hwang, T; Schroder, DK, SOLID-STATE ELECTRONICS, v.43, no.2, pp.349 - 353, 1999-02 |
Partially Depleted SOI NMOSFET's with Self-Aligned Polysilicon Gate Formed on the Recessed Channel Region Jong-Ho Lee; Hyung-Cheol Shin; Jong-June Kim; Choon-Bae Park; Young-June Park, IEEE ELECTRON DEVICE LETTERS, v.18, no.5, pp.184 - 186, 1997-05 |
RECRYSTALLIZATION OF LPCVD AMORPHOUS SI FILMS USING F+ IMPLANTATION PARK, JW; MOON, DG; Ahn, Byung Tae; Lim, Ho Bin; Lee, Kwyro, THIN SOLID FILMS, v.245, no.1-2, pp.228 - 233, 1994-06 |
Stability of N-Channel Polysilicon Thin-Film Transistors with ECR Plasma Thermal Gate Oxide j.y. lee; c.h. han; Kim, Choong Ki, IEEE ELECTRON DEVICE LETTERS, v.17, no.4, pp.169 - 171, 1996-04 |
THE EFFECTS OF X-RAY IRRADIATION-INDUCED DAMAGE ON RELIABILITY IN MOS STRUCTURES KIM, S; LEE, H; HAN, CH; Lee, Kwyro; CHOI, S; JEON, Y; DIFABRIZIO, E; et al, SOLID-STATE ELECTRONICS, v.38, no.1, pp.95 - 99, 1995-01 |
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