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50nm MOSFET with Electrically Induced Source/Drain Extensions sangyeon han; sung-il chang; jongho lee; hyungcheol shin, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.48, no.9, pp.2058 - 2064, 2001-09 |
Characteristics of MOSFET with non-overlapped source-drain to gate Lee, H; Chang, SI; Lee, J; Shin, Hyung-Cheol, IEICE TRANSACTIONS ON ELECTRONICS, v.E85C, no.5, pp.1079 - 1085, 2002-05 |
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