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Enhancement of the stability of capacitance-voltage characteristics of Hg1-xZnxTe-based metal-insulator-semiconductor capacitors by voltage annealing Kim, Y.H; Kim, S.H, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, v.43, no.10A, pp.L1244 - L1246, 2004-10 |
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