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Improved Stability of Short-Channel Hydrogenated N-Channel Polycrystalline Silicon Thin Film Transistors with Very Thin ECR N2O-Plasma Gate Oxide J.W.Lee; N.I.Lee; C.H.Han, IEEE ELECTRON DEVICE LETTERS, v.19, no.12, pp.458 - 458, 1998-12 |
Stability of Hydrogenated P-Channel Polycrystalline Silicon Thin Film Transistors with Electron Cyclotron Resonance N2O-Plasma Gate Oxide J.W.Lee; N.I.Lee; C.H.Han, IEEE ELECTRON DEVICE LETTERS, v.20, no.1, 1999-01 |
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