A New Microwave Noise Model of the MESFET

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dc.contributor.authorHan, Jong-Hee-
dc.contributor.authorKo, Jin-Su-
dc.contributor.authorKo, Beom-kyu-
dc.contributor.authorLee, Kwyro-
dc.date.accessioned2011-05-02T02:51:21Z-
dc.date.available2011-05-02T02:51:21Z-
dc.date.created2012-02-06-
dc.date.issued1993-
dc.identifier.citationInternational Device Research Symposium, v., no., pp.783 - 786-
dc.identifier.urihttp://hdl.handle.net/10203/23462-
dc.description.sponsorshipThis work was supported by the Agency for Defense Development.en
dc.languageENG-
dc.language.isoen_USen
dc.publisherIDRS-
dc.titleA New Microwave Noise Model of the MESFET-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.beginningpage783-
dc.citation.endingpage786-
dc.citation.publicationnameInternational Device Research Symposium-
dc.identifier.conferencecountryUnited States-
dc.identifier.conferencecountryUnited States-
dc.contributor.localauthorLee, Kwyro-
dc.contributor.nonIdAuthorHan, Jong-Hee-
dc.contributor.nonIdAuthorKo, Jin-Su-
dc.contributor.nonIdAuthorKo, Beom-kyu-

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