Atomic-Resolution Imaging of the Nanoscale Origin of Toughness in Rare-Earth Doped SiC

Cited 0 time in webofscience Cited 22 time in scopus
  • Hit : 521
  • Download : 21
Ultrahigh-resolution transmission electron microscopy and atomic-scale spectroscopy are used to investigate the origin of the toughness in rare-earth doped silicon carbide (RE-SiC) by examining the mechanistic nature of the intergranular cracking events which we find to occur precisely along the RE-decorated interface between the SiC grains and the nanoscale grain-boundary phase. We conclude that, for optimal toughness, the relative elastic modulus across the grain-boundary phase and the interfacial fracture toughness are the most critical material parameters; both can be altered with judicious choice of rare-earth elements.

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0