DC Field | Value | Language |
---|---|---|
dc.contributor.author | 이귀로 | ko |
dc.date.accessioned | 2017-12-20T11:16:13Z | - |
dc.date.available | 2017-12-20T11:16:13Z | - |
dc.date.issued | 2001-09-04 | - |
dc.identifier.uri | http://hdl.handle.net/10203/233728 | - |
dc.description.abstract | A single-chip radio structure with a piezoelectric crystal device integrated on a monolithic integrated circuit and a method of fabricating the same. A thin or thick piezoelectric crystal wafer is bonded on a silicon substrate and adjusted in thickness by mechanical grinding and polishing processes. Then, a surface acoustic wave resonator and other passive devices such as a filter, inductor, etc. are formed on the piezoelectric crystal wafer by a standard lithography process. Therefore, a high-precision oscillator and various passive devices can be included in a monolithic integrated circuit to implement a single-chip radio structure. This single-chip radio structure has the effect of reducing the volume and weight of the entire receiver while maintaining excellent performances provided by passive devices on a crystal substrate, such as frequency stability, frequency linearity and low power consumption, etc., as they are. | - |
dc.title | Single-chip radio structure with piezoelectric crystal device integrated on monolithic integrated circuit and method of fabricating the same | - |
dc.title.alternative | 모노리딕 집적회로위에 박막 또는 후막 단결정 압력소자를 집적한 단일 칩 라디오의 구조 및 그 제조방법 | - |
dc.type | Patent | - |
dc.type.rims | PAT | - |
dc.contributor.localauthor | 이귀로 | - |
dc.contributor.assignee | KAIST | - |
dc.identifier.iprsType | 특허 | - |
dc.identifier.patentApplicationNumber | 09336297 | - |
dc.identifier.patentRegistrationNumber | 6285866 | - |
dc.date.application | 1999-06-21 | - |
dc.date.registration | 2001-09-04 | - |
dc.publisher.country | US | - |
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