Low voltage balun circuit저 전압용 발룬 회로

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dc.contributor.author이상국ko
dc.date.accessioned2017-12-20T11:15:57Z-
dc.date.available2017-12-20T11:15:57Z-
dc.date.issued2001-07-24-
dc.identifier.urihttp://hdl.handle.net/10203/233718-
dc.description.abstractA balun circuit capable of operating at low voltages comprises a set of a load resistor, a first and a second transistors connected in series in that order between a supply voltage source and the ground and another set of a load resistor, a third and a fourth transistors connected in series in that order between the supply voltage source and the ground. The emitters of the first and the third transistors are connected to the collectors of the second and the fourth transistors, respectively. The balun circuit further comprises a bias voltage source connected to the bases of the first and the third transistors; a bias current source connected to the bases of the second and the fourth transistors; a first capacitor; an input voltage source coupled to the collector of the second transistor via the first capacitor; and a second capacitor coupled between the base and the collector of the second transistor.-
dc.titleLow voltage balun circuit-
dc.title.alternative저 전압용 발룬 회로-
dc.typePatent-
dc.type.rimsPAT-
dc.contributor.localauthor이상국-
dc.contributor.assigneeInformation and Communications University-
dc.identifier.iprsType특허-
dc.identifier.patentApplicationNumber09461596-
dc.identifier.patentRegistrationNumber6265908-
dc.date.application1999-12-15-
dc.date.registration2001-07-24-
dc.publisher.countryUS-
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EE-Patent(특허)
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