DC Field | Value | Language |
---|---|---|
dc.contributor.author | 홍성철 | ko |
dc.date.accessioned | 2017-12-20T11:13:49Z | - |
dc.date.available | 2017-12-20T11:13:49Z | - |
dc.date.issued | 2001-04-24 | - |
dc.identifier.uri | http://hdl.handle.net/10203/233637 | - |
dc.description.abstract | The present invention relates to a circuit for controlling waveform distortion resulting from nonlinearity of the impedance of a control terminal (gate or base) capacitance of a transistor, which can be employed in circuits showing a nonlinearity performance of high frequency amplifier or oscillator. According to the circuit of the invention, the waveform distortion can be properly controlled to improve the efficiency of power conversion in a high frequency circuit employing FET, regardless of the frequency band, while assuring a favorable matching of input for the circuit. Also, it can provide the reliability of an integrated circuit by employing outside voltage control circuit. Moreover, it can be fabricated on a wafer substrate of FET circuit with an inexpensive cost, which affords unrestricted designing of the circuit. | - |
dc.title | Circuit for controlling waveform distortion at a control terminal of a radio frequency transistor | - |
dc.title.alternative | 초고주파용 전계효과 트랜지스터회로의 게이트단자 파형 왜곡제어회로 | - |
dc.type | Patent | - |
dc.type.rims | PAT | - |
dc.contributor.localauthor | 홍성철 | - |
dc.contributor.assignee | KAIST | - |
dc.identifier.iprsType | 특허 | - |
dc.identifier.patentApplicationNumber | 08960640 | - |
dc.identifier.patentRegistrationNumber | 6222412 | - |
dc.date.application | 1997-10-30 | - |
dc.date.registration | 2001-04-24 | - |
dc.publisher.country | US | - |
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