NON-VOLATILE MEMORY DEVICE AND MOSFET USING GRAPHENE GATE ELECTRODE

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Disclosed herein is a method of remarkably improving the memory characteristics of a non-volatile memory device and the device reliability of the MOSFET using graphene which is a novel material that has a high work function and does not cause the deterioration of a lower insulating film.
Assignee
KAIST
Country
US (United States)
Issue Date
2014-01-28
Application Date
2012-01-03
Application Number
13342282
Registration Date
2014-01-28
Registration Number
8638614
URI
http://hdl.handle.net/10203/232989
Appears in Collection
EE-Patent(특허)
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