DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Sang Ouk | ko |
dc.contributor.author | Park, Ji Sun | ko |
dc.contributor.author | Lee, Ju Min | ko |
dc.contributor.author | Song, Myoung Hoon | ko |
dc.date.accessioned | 2017-12-20T10:52:21Z | - |
dc.date.available | 2017-12-20T10:52:21Z | - |
dc.date.issued | 2014-05-20 | - |
dc.identifier.uri | http://hdl.handle.net/10203/232968 | - |
dc.description.abstract | Provided is a method for controlling a device using a doped carbon-nanostructure, and a device including the doped carbon-nanostructure, in which the method for controlling the device selectively controls the mobility of electrons or holes using N-type or P-type doped carbon-nanostructure; the N-type or P-type impurities-doped carbon-nanostructure can selectively control the transport of electrons or holes according to a doped material; and also since the doped carbon-nanostructure limits the transport of charge that is the opposite charge to the transport facilitating charge, it can improve the efficiency of device by adding to a functional layer of device or using as a separate layer in the electrons or holes-only transporting device. | - |
dc.title | CONTROL METHOD FOR DEVICE USING DOPED CARBON-NANOSTRUCTURE AND DEVICE COMPRISING DOPED CARBON-NANOSTRUCTURE | - |
dc.title.alternative | 도핑 탄소나노구조체를 이용한 소자 제어방법 및 도핑 탄소 나노구조체를 포함하는 소자 | - |
dc.type | Patent | - |
dc.type.rims | PAT | - |
dc.contributor.localauthor | Kim, Sang Ouk | - |
dc.contributor.nonIdAuthor | Park, Ji Sun | - |
dc.contributor.nonIdAuthor | Lee, Ju Min | - |
dc.contributor.nonIdAuthor | Song, Myoung Hoon | - |
dc.contributor.assignee | KAIST | - |
dc.identifier.iprsType | 특허 | - |
dc.identifier.patentApplicationNumber | 13298162 | - |
dc.identifier.patentRegistrationNumber | 8729597 | - |
dc.date.application | 2011-11-16 | - |
dc.date.registration | 2014-05-20 | - |
dc.publisher.country | US | - |
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