CONTROL METHOD FOR DEVICE USING DOPED CARBON-NANOSTRUCTURE AND DEVICE COMPRISING DOPED CARBON-NANOSTRUCTURE도핑 탄소나노구조체를 이용한 소자 제어방법 및 도핑 탄소 나노구조체를 포함하는 소자

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Provided is a method for controlling a device using a doped carbon-nanostructure, and a device including the doped carbon-nanostructure, in which the method for controlling the device selectively controls the mobility of electrons or holes using N-type or P-type doped carbon-nanostructure; the N-type or P-type impurities-doped carbon-nanostructure can selectively control the transport of electrons or holes according to a doped material; and also since the doped carbon-nanostructure limits the transport of charge that is the opposite charge to the transport facilitating charge, it can improve the efficiency of device by adding to a functional layer of device or using as a separate layer in the electrons or holes-only transporting device.
Assignee
KAIST
Country
US (United States)
Issue Date
2014-05-20
Application Date
2011-11-16
Application Number
13298162
Registration Date
2014-05-20
Registration Number
8729597
URI
http://hdl.handle.net/10203/232968
Appears in Collection
MS-Patent(특허)
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