CONTROL METHOD FOR DEVICE USING DOPED CARBON-NANOSTRUCTURE AND DEVICE COMPRISING DOPED CARBON-NANOSTRUCTURE도핑 탄소나노구조체를 이용한 소자 제어방법 및 도핑 탄소 나노구조체를 포함하는 소자
Provided is a method for controlling a device using a doped carbon-nanostructure, and a device including the doped carbon-nanostructure, in which the method for controlling the device selectively controls the mobility of electrons or holes using N-type or P-type doped carbon-nanostructure; the N-type or P-type impurities-doped carbon-nanostructure can selectively control the transport of electrons or holes according to a doped material; and also since the doped carbon-nanostructure limits the transport of charge that is the opposite charge to the transport facilitating charge, it can improve the efficiency of device by adding to a functional layer of device or using as a separate layer in the electrons or holes-only transporting device.