Complementary metal oxide semiconductor image sensor and method for fabricating the same
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Choi, Yang-Kyu | ko |
| dc.contributor.author | Kim, Kuk-Hwan | ko |
| dc.date.accessioned | 2017-12-20T10:39:15Z | - |
| dc.date.available | 2017-12-20T10:39:15Z | - |
| dc.date.issued | 2010-06-22 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/232723 | - |
| dc.description.abstract | Provided are a CMOS image sensor and a method for fabricating the same. A nanopillar is plurally formed at an upper end of a light receiving element. | - |
| dc.title | Complementary metal oxide semiconductor image sensor and method for fabricating the same | - |
| dc.type | Patent | - |
| dc.type.rims | PAT | - |
| dc.contributor.localauthor | Choi, Yang-Kyu | - |
| dc.contributor.nonIdAuthor | Kim, Kuk-Hwan | - |
| dc.contributor.assignee | KAIST | - |
| dc.identifier.iprsType | 특허 | - |
| dc.identifier.patentApplicationNumber | 11567513 | - |
| dc.identifier.patentRegistrationNumber | 7741664 | - |
| dc.date.application | 2006-12-06 | - |
| dc.date.registration | 2010-06-22 | - |
| dc.publisher.country | US | - |
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