DC Field | Value | Language |
---|---|---|
dc.contributor.author | Ahn, Byung-Tae | ko |
dc.contributor.author | Kim, Do-Kyung | ko |
dc.contributor.author | Kim, Jong-Hee | ko |
dc.contributor.author | Lee, Jeong-No | ko |
dc.contributor.author | Kim, Yoon-Chang | ko |
dc.date.accessioned | 2017-12-20T10:30:08Z | - |
dc.date.available | 2017-12-20T10:30:08Z | - |
dc.date.issued | 2003-03-04 | - |
dc.identifier.uri | http://hdl.handle.net/10203/232575 | - |
dc.description.abstract | The present invention relates to a process for preparing a polycrystalline silicon thin film comprising a step of microwave annealing and crystallization of an amorphous thin film of silicon semiconductor, silicon semiconductor added with impurities, IV family semiconductor comprising Si alloy such as Si.sub.1 -.sub.x Ge.sub.x, III-V family and II-VI family semiconductor. The process for preparing polycrystalline silicon thin film of the present invention comprises the steps of: immersing a washed substrate into a deposition equipment and heating the substrate; depositing an amorphous or microcrystalline silicon thin film on the substrate; and, annealing the deposited thin film employing microwave for crystallization. | - |
dc.title | Process for preparing a polycrystalline silicon thin film | - |
dc.type | Patent | - |
dc.type.rims | PAT | - |
dc.contributor.localauthor | Ahn, Byung-Tae | - |
dc.contributor.localauthor | Kim, Do-Kyung | - |
dc.contributor.nonIdAuthor | Kim, Jong-Hee | - |
dc.contributor.nonIdAuthor | Lee, Jeong-No | - |
dc.contributor.nonIdAuthor | Kim, Yoon-Chang | - |
dc.contributor.assignee | KAIST | - |
dc.identifier.iprsType | 특허 | - |
dc.identifier.patentApplicationNumber | 09639212 | - |
dc.identifier.patentRegistrationNumber | 6528361 | - |
dc.date.application | 2000-08-14 | - |
dc.date.registration | 2003-03-04 | - |
dc.publisher.country | US | - |
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