산화티타늄을 활성층으로 갖는 박막 트랜지스터의 제조 방법 및 그 구조THIN FILM TRANSISTOR INCLUDING TITANIUM OXIDES AS ACTIVE LAYER AND METHOD OF MANUFACTURING THE SAME
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 박재우 | ko |
| dc.contributor.author | 유승협 | ko |
| dc.date.accessioned | 2017-12-20T02:09:09Z | - |
| dc.date.available | 2017-12-20T02:09:09Z | - |
| dc.date.issued | 2011-06-15 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/230307 | - |
| dc.title | 산화티타늄을 활성층으로 갖는 박막 트랜지스터의 제조 방법 및 그 구조 | - |
| dc.title.alternative | THIN FILM TRANSISTOR INCLUDING TITANIUM OXIDES AS ACTIVE LAYER AND METHOD OF MANUFACTURING THE SAME | - |
| dc.type | Patent | - |
| dc.type.rims | PAT | - |
| dc.contributor.localauthor | 유승협 | - |
| dc.contributor.nonIdAuthor | 박재우 | - |
| dc.contributor.assignee | 한국과학기술원 | - |
| dc.identifier.iprsType | 특허 | - |
| dc.identifier.patentApplicationNumber | 2008-005930 | - |
| dc.identifier.patentRegistrationNumber | 1976019 | - |
| dc.date.application | 2008-03-28 | - |
| dc.date.registration | 2011-06-15 | - |
| dc.publisher.country | UK | - |
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