Meta-photoresist for lithography리소그래피용 메타-포토레지스트
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 정기훈 | ko |
| dc.contributor.author | 이영섭 | ko |
| dc.contributor.author | 김재범 | ko |
| dc.date.accessioned | 2017-12-20T02:00:42Z | - |
| dc.date.available | 2017-12-20T02:00:42Z | - |
| dc.date.issued | 2016-07-19 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/230167 | - |
| dc.description.abstract | Provided are a meta-photoresist capable of transferring mask patterns on which fine patterns having a diffraction limit or less are formed, on a substrate, and a lithography method using the same, wherein the meta-photoresist contains a photosensitive resin layer and a metal particle layer which is a layer of metal particles arranged so as to be spaced apart from each other. | - |
| dc.title | Meta-photoresist for lithography | - |
| dc.title.alternative | 리소그래피용 메타-포토레지스트 | - |
| dc.type | Patent | - |
| dc.type.rims | PAT | - |
| dc.contributor.localauthor | 정기훈 | - |
| dc.contributor.nonIdAuthor | 이영섭 | - |
| dc.contributor.nonIdAuthor | 김재범 | - |
| dc.contributor.assignee | KAIST | - |
| dc.identifier.iprsType | 특허 | - |
| dc.identifier.patentApplicationNumber | 14296186 | - |
| dc.identifier.patentRegistrationNumber | 9395624 | - |
| dc.date.application | 2014-06-04 | - |
| dc.date.registration | 2016-07-19 | - |
| dc.publisher.country | US | - |
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