Method for high-frequency amplifier using power gain-boosting technique파워 획득 증폭 기술을 사용해 고주파 증폭기를 위한 방법

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dc.contributor.author이상국ko
dc.contributor.authorBao Lam Huuko
dc.contributor.author김선아ko
dc.contributor.author이정선ko
dc.date.accessioned2017-12-20T01:42:32Z-
dc.date.available2017-12-20T01:42:32Z-
dc.date.issued2016-10-04-
dc.identifier.urihttp://hdl.handle.net/10203/229960-
dc.description.abstractThe present invention provides a power gain-boosting technique for an amplifier in order to compensate for the decrease of Gmag in a transistor at high frequencies. A power gain-boosting technique of the present invention comprises the steps of: finding the Maximum Unilateral Gain or Mason's Invariant U of a transistor; designing a linear, lossless, reciprocal network embedding the transistor so that the final equivalent S-, Y-, or Z-parameters satisfy the condition: embedding the transistor into the linear, lossless, reciprocal network; and constructing simultaneous conjugate matching.-
dc.titleMethod for high-frequency amplifier using power gain-boosting technique-
dc.title.alternative파워 획득 증폭 기술을 사용해 고주파 증폭기를 위한 방법-
dc.typePatent-
dc.type.rimsPAT-
dc.contributor.localauthor이상국-
dc.contributor.nonIdAuthorBao Lam Huu-
dc.contributor.nonIdAuthor김선아-
dc.contributor.nonIdAuthor이정선-
dc.contributor.assigneeKAIST-
dc.identifier.iprsType특허-
dc.identifier.patentApplicationNumber14590253-
dc.identifier.patentRegistrationNumber9461600-
dc.date.application2015-01-06-
dc.date.registration2016-10-04-
dc.publisher.countryUS-
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