Parametric expression of subthreshold slope using threshold voltage parameters for MOSFET statistical modeling

Cited 0 time in webofscience Cited 0 time in scopus
  • Hit : 350
  • Download : 455
DC FieldValueLanguage
dc.contributor.authorMin, Kyeong-Sikko
dc.contributor.authorLee, Kwyroko
dc.date.accessioned2011-03-23T08:03:54Z-
dc.date.available2011-03-23T08:03:54Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued1996-11-26-
dc.identifier.citationProceedings of the 1996 IEEE International Conference on Semiconductor Electronics, ICSE, pp.50 - 53-
dc.identifier.urihttp://hdl.handle.net/10203/22947-
dc.languageEnglish-
dc.language.isoen_USen
dc.publisherIEEE-
dc.titleParametric expression of subthreshold slope using threshold voltage parameters for MOSFET statistical modeling-
dc.typeConference-
dc.identifier.wosidA1996BJ54J00013-
dc.identifier.scopusid2-s2.0-0030708328-
dc.type.rimsCONF-
dc.citation.beginningpage50-
dc.citation.endingpage53-
dc.citation.publicationnameProceedings of the 1996 IEEE International Conference on Semiconductor Electronics, ICSE-
dc.identifier.conferencecountryMY-
dc.identifier.conferencelocationPenang, Malaysia-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.contributor.localauthorLee, Kwyro-
dc.contributor.nonIdAuthorMin, Kyeong-Sik-
Appears in Collection
EE-Conference Papers(학술회의논문)
Files in This Item

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0