CMOS Image SensorCMOS 이미지 센서
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 최양규 | ko |
| dc.contributor.author | 이상준 | ko |
| dc.contributor.author | 장동윤 | ko |
| dc.date.accessioned | 2017-12-20T01:14:18Z | - |
| dc.date.available | 2017-12-20T01:14:18Z | - |
| dc.date.issued | 2009-09-18 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/229352 | - |
| dc.description.abstract | Disclosed is a CMOS image sensor, comprising a photodiode formed in a substrate, a floating diffusion region formed in the substrate in a manner such that it is distanced from the photodiode surrounds the photodiode and a transfer gate formed in a manner such that it is distanced from the photodiode and the floating diffusion region and formed in a boundary area between the photodiode and the floating diffusion region, thereby overlapping the photodiode and the floating diffusion region. | - |
| dc.title | CMOS Image Sensor | - |
| dc.title.alternative | CMOS 이미지 센서 | - |
| dc.type | Patent | - |
| dc.type.rims | PAT | - |
| dc.contributor.localauthor | 최양규 | - |
| dc.contributor.nonIdAuthor | 이상준 | - |
| dc.contributor.nonIdAuthor | 장동윤 | - |
| dc.contributor.assignee | KAIST | - |
| dc.identifier.iprsType | 특허 | - |
| dc.identifier.patentApplicationNumber | 2006-166845 | - |
| dc.identifier.patentRegistrationNumber | 4378363 | - |
| dc.date.application | 2006-06-16 | - |
| dc.date.registration | 2009-09-18 | - |
| dc.publisher.country | JA | - |
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