DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kang, Youngho | ko |
dc.contributor.author | Nahm, Ho-Hyun | ko |
dc.contributor.author | Han, Seungwu | ko |
dc.date.accessioned | 2017-12-19T03:11:12Z | - |
dc.date.available | 2017-12-19T03:11:12Z | - |
dc.date.created | 2017-12-08 | - |
dc.date.created | 2017-12-08 | - |
dc.date.created | 2017-12-08 | - |
dc.date.issued | 2016-10 | - |
dc.identifier.citation | SCIENTIFIC REPORTS, v.6 | - |
dc.identifier.issn | 2045-2322 | - |
dc.identifier.uri | http://hdl.handle.net/10203/228663 | - |
dc.description.abstract | The persistent photoconductivity (PPC) in ZnO has been a critical problem in opto-electrical devices employing ZnO such as ultraviolet sensors and thin film transistors for the transparent display. While the metastable state of oxygen vacancy (V-O) is widely accepted as the microscopic origin of PPC, recent experiments on the influence of temperature and oxygen environments are at variance with the V-O model. In this study, using the density-functional theory calculations, we propose a novel mechanism of PPC that involves the hydrogen-zinc vacancy defect complex (2H-V-Zn). We show that a substantial amount of 2H-V-Zn can exist during the growth process due to its low formation energy. The light absorption of 2H-V-Zn leads to the metastable state that is characterized by the formation of O-2(2-) (peroxide) around the defect, leaving the free carriers in the conduction band. Furthermore, we estimate the lifetime of photo-electrons to be similar to 20 secs, which is similar to the experimental observation. Our model also explains the experimental results showing that PPC is enhanced (suppressed) in oxygen-rich (low-temperature) conditions. By revealing a convincing origin of PPC in ZnO, we expect that the present work will pave the way for optimizing optoelectronic properties of ZnO. | - |
dc.language | English | - |
dc.publisher | NATURE PUBLISHING GROUP | - |
dc.subject | THIN-FILM TRANSISTORS | - |
dc.subject | AB-INITIO | - |
dc.subject | DEFECTS | - |
dc.title | Light-Induced Peroxide Formation in ZnO: Origin of Persistent Photoconductivity | - |
dc.type | Article | - |
dc.identifier.wosid | 000385352700001 | - |
dc.type.rims | ART | - |
dc.citation.volume | 6 | - |
dc.citation.publicationname | SCIENTIFIC REPORTS | - |
dc.identifier.doi | 10.1038/srep35148 | - |
dc.contributor.localauthor | Nahm, Ho-Hyun | - |
dc.contributor.nonIdAuthor | Kang, Youngho | - |
dc.contributor.nonIdAuthor | Han, Seungwu | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | AB-INITIO | - |
dc.subject.keywordPlus | DEFECTS | - |
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