DC Field | Value | Language |
---|---|---|
dc.contributor.author | Shin, Yeong Jae | ko |
dc.contributor.author | Wang, Lingfei | ko |
dc.contributor.author | Kim, Yoonkoo | ko |
dc.contributor.author | Nahm, Ho-Hyun | ko |
dc.contributor.author | Lee, Daesu | ko |
dc.contributor.author | Kim, Jeong Rae | ko |
dc.contributor.author | Yang, San Mo | ko |
dc.contributor.author | Yoon, Jong-Gul | ko |
dc.contributor.author | Chung, Jin-Seok | ko |
dc.contributor.author | Kim, Miyoung | ko |
dc.contributor.author | Chang, Seo Hyoung | ko |
dc.contributor.author | Noh, Tae Won | ko |
dc.date.accessioned | 2017-12-19T03:05:03Z | - |
dc.date.available | 2017-12-19T03:05:03Z | - |
dc.date.created | 2017-12-08 | - |
dc.date.created | 2017-12-08 | - |
dc.date.created | 2017-12-08 | - |
dc.date.issued | 2017-08 | - |
dc.identifier.citation | ACS APPLIED MATERIALS INTERFACES, v.9, no.32, pp.27305 - 27312 | - |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.uri | http://hdl.handle.net/10203/228641 | - |
dc.description.abstract | With recent trends on miniaturizing oxide-baed devices, the need for atomic-scale control of surface/interface structures by pulsed laser deposition (PLD) has increased. In particular, realizing uniform atomic termination at the surface/ interface is highly desirable. However, a lack of understanding on the surface formation mechanism in PLD has limited a deliberate control of surface/interface atomic stacking sequences. Here, taking the prototypical-SrRuO3/BaTiO3/SrRuO3 (SRO/BTO/SRO) heterostructure as a model system, we investigated the formation of different interfacial termination sequences (BaO-RuO2 or TiO2-SrO) with oxygen partial pressure (PO2) during PLD. We found that a uniform SrO TiO2 termination sequence at the SRO/BTO interface can be achieved by lowering the Po-2 to 5 mTorr, regardless of the total background gas pressure (P-total), growth mode, or growth rate. Our results indicate that the thermodynamic stability of the BTO surface at the low-energy kinetics stage of PLD can play an important role in surface/interface termination formation. This work paves the way for realizing termination engineering in functional oxide heterostructures. | - |
dc.language | English | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.subject | FERROELECTRIC TUNNEL-JUNCTIONS | - |
dc.subject | THIN-FILMS | - |
dc.subject | OXIDE INTERFACES | - |
dc.subject | GROWTH | - |
dc.subject | POLARIZATION | - |
dc.subject | SRTIO3 | - |
dc.subject | ELECTRORESISTANCE | - |
dc.subject | STOICHIOMETRY | - |
dc.subject | BARRIER | - |
dc.subject | GAS | - |
dc.title | Oxygen Partial Pressure during Pulsed Laser Deposition: Deterministic Role on Thermodynamic Stability of Atomic Termination Sequence at SrRuO3/BaTiO3 Interface | - |
dc.type | Article | - |
dc.identifier.wosid | 000408178400073 | - |
dc.type.rims | ART | - |
dc.citation.volume | 9 | - |
dc.citation.issue | 32 | - |
dc.citation.beginningpage | 27305 | - |
dc.citation.endingpage | 27312 | - |
dc.citation.publicationname | ACS APPLIED MATERIALS INTERFACES | - |
dc.identifier.doi | 10.1021/acsami.7b07813 | - |
dc.contributor.localauthor | Nahm, Ho-Hyun | - |
dc.contributor.nonIdAuthor | Shin, Yeong Jae | - |
dc.contributor.nonIdAuthor | Wang, Lingfei | - |
dc.contributor.nonIdAuthor | Kim, Yoonkoo | - |
dc.contributor.nonIdAuthor | Lee, Daesu | - |
dc.contributor.nonIdAuthor | Kim, Jeong Rae | - |
dc.contributor.nonIdAuthor | Yang, San Mo | - |
dc.contributor.nonIdAuthor | Yoon, Jong-Gul | - |
dc.contributor.nonIdAuthor | Chung, Jin-Seok | - |
dc.contributor.nonIdAuthor | Kim, Miyoung | - |
dc.contributor.nonIdAuthor | Chang, Seo Hyoung | - |
dc.contributor.nonIdAuthor | Noh, Tae Won | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | ferroelectric | - |
dc.subject.keywordAuthor | interface engineering | - |
dc.subject.keywordAuthor | oxide heterostructure | - |
dc.subject.keywordAuthor | pulsed laser deposition | - |
dc.subject.keywordAuthor | thermodynamic surface stability | - |
dc.subject.keywordPlus | FERROELECTRIC TUNNEL-JUNCTIONS | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | OXIDE INTERFACES | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | POLARIZATION | - |
dc.subject.keywordPlus | SRTIO3 | - |
dc.subject.keywordPlus | ELECTRORESISTANCE | - |
dc.subject.keywordPlus | STOICHIOMETRY | - |
dc.subject.keywordPlus | BARRIER | - |
dc.subject.keywordPlus | GAS | - |
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