DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Seung-Yoon | ko |
dc.contributor.author | Bong, Jae Hoon | ko |
dc.contributor.author | Kim, Cheolgyu | ko |
dc.contributor.author | Hwang, Wan Sik | ko |
dc.contributor.author | Kim, Taek-Soo | ko |
dc.contributor.author | Cho, Byung Jin | ko |
dc.date.accessioned | 2017-12-19T03:01:51Z | - |
dc.date.available | 2017-12-19T03:01:51Z | - |
dc.date.created | 2017-12-11 | - |
dc.date.created | 2017-12-11 | - |
dc.date.created | 2017-12-11 | - |
dc.date.issued | 2017-11 | - |
dc.identifier.citation | ADVANCED MATERIALS INTERFACES, v.4, no.21 | - |
dc.identifier.issn | 2196-7350 | - |
dc.identifier.uri | http://hdl.handle.net/10203/228587 | - |
dc.description.abstract | High-performance mechanically flexible Si nanomembrane (NM) fully depleted silicon-on-insulator field-effect transistors are realized via neutral mechanical plane (NMP) optimization. This NMP-optimized Si NM flexible device, using both the analytical and numerical modeling, shows excellent mechanical and electrical stability even at a bending condition with a 1 mm radius. The strain at this point is less than 0.01% that is much smaller than the strain tolerance of 0.1%. This work reveals that mechanical reliability is heavily associated with the location of the NMP and the NMP optimization is essential to realize the Si NM flexible electronics. | - |
dc.language | English | - |
dc.publisher | WILEY | - |
dc.title | Mechanical Stability Analysis via Neutral Mechanical Plane for High-Performance Flexible Si Nanomembrane FDSOI Device | - |
dc.type | Article | - |
dc.identifier.wosid | 000415903000010 | - |
dc.identifier.scopusid | 2-s2.0-85028934467 | - |
dc.type.rims | ART | - |
dc.citation.volume | 4 | - |
dc.citation.issue | 21 | - |
dc.citation.publicationname | ADVANCED MATERIALS INTERFACES | - |
dc.identifier.doi | 10.1002/admi.201700618 | - |
dc.contributor.localauthor | Kim, Taek-Soo | - |
dc.contributor.localauthor | Cho, Byung Jin | - |
dc.contributor.nonIdAuthor | Hwang, Wan Sik | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | FDSOI | - |
dc.subject.keywordAuthor | flexible electronics | - |
dc.subject.keywordAuthor | neutral mechanical plane | - |
dc.subject.keywordAuthor | Si nanomembranes | - |
dc.subject.keywordAuthor | ultraflexible silicon devices | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | INTEGRATED-CIRCUITS | - |
dc.subject.keywordPlus | ELECTRONICS | - |
dc.subject.keywordPlus | GRAPHENE | - |
dc.subject.keywordPlus | SILICON | - |
dc.subject.keywordPlus | TEMPERATURE | - |
dc.subject.keywordPlus | MOBILITY | - |
dc.subject.keywordPlus | GATE | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.