Resistive Switching Characteristics of Al2O3 Film for Transparent Nonvolatile Memory

Abstract

Transparent resistive memory requires a transparent electrode and thin storage layer. In this letter, we highlight the importance of a dielectric and metal multilayer electrode for transparency with good flexible characteristics also. In particular, we utilized the stable properties of resistive memory obtained from an inserted thin layer near the oxide layer. The optimized thickness of the whole structure was calculated by MATLAB simulation, which followed the model of the optical transfer matrix theory. The transparent resistive memory has stable resistive switching behaviors.