DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Seung-Min | ko |
dc.contributor.author | Choi, Won Chul | ko |
dc.contributor.author | Kim, Junsoo | ko |
dc.contributor.author | Kim, Taekwang | ko |
dc.contributor.author | Lee, Jaewoo | ko |
dc.contributor.author | Im, Sol Yee | ko |
dc.contributor.author | Kwon, Jung Yoon | ko |
dc.contributor.author | Seo, Sunae | ko |
dc.contributor.author | Shin, Mincheol | ko |
dc.contributor.author | Moon, Seung Eon | ko |
dc.date.accessioned | 2017-12-19T00:57:30Z | - |
dc.date.available | 2017-12-19T00:57:30Z | - |
dc.date.created | 2017-11-29 | - |
dc.date.created | 2017-11-29 | - |
dc.date.issued | 2017-12 | - |
dc.identifier.citation | INTERNATIONAL JOURNAL OF THERMOPHYSICS, v.38, no.176 | - |
dc.identifier.issn | 0195-928X | - |
dc.identifier.uri | http://hdl.handle.net/10203/228429 | - |
dc.description.abstract | On Si and sapphire substrates, 6-45 nm thick films of atomic layerdeposited Al2O3 were grown. The thermal conductivity of ALD films has been determined from a linear relation between film thickness and thermal resistance measured by the 3 omega method. ALD films on Si and sapphire showed almost same thermal conductivity in the temperature range of 50-350 K. Residual thermal resistance was also obtained by extrapolation of the linear fit and was modeled as a sum of the thermal boundary resistances at heater-film and film-substrate interfaces. The total thermal resistance addenda for films on sapphire was close to independently measured thermal boundary resistance of heater-sapphire interface. From the result, it was deduced that the thermal boundary resistance at ALD Al2O3-sapphire interface was much lower than that of heater-film. By contrast, the films on Si showed significantly larger thermal boundary resistance than films on sapphire. Data of < 30 nm films on Si were excluded because an AC coupling of electrical heating voltage to semiconductive Si complicated the relation between 3 omega voltage and temperature. | - |
dc.language | English | - |
dc.publisher | SPRINGER/PLENUM PUBLISHERS | - |
dc.subject | ATOMIC LAYER DEPOSITION | - |
dc.subject | THIN DIELECTRIC FILMS | - |
dc.subject | 3-OMEGA METHOD | - |
dc.subject | CONDUCTANCE | - |
dc.subject | TRANSPORT | - |
dc.subject | ALPHA-AL2O3 | - |
dc.subject | GROWTH | - |
dc.title | Thermal Conductivity and Thermal Boundary Resistances of ALD Al2O3 Films on Si and Sapphire | - |
dc.type | Article | - |
dc.identifier.wosid | 000418909400001 | - |
dc.identifier.scopusid | 2-s2.0-85032015455 | - |
dc.type.rims | ART | - |
dc.citation.volume | 38 | - |
dc.citation.issue | 176 | - |
dc.citation.publicationname | INTERNATIONAL JOURNAL OF THERMOPHYSICS | - |
dc.identifier.doi | 10.1007/s10765-017-2308-5 | - |
dc.contributor.localauthor | Shin, Mincheol | - |
dc.contributor.nonIdAuthor | Lee, Seung-Min | - |
dc.contributor.nonIdAuthor | Kim, Junsoo | - |
dc.contributor.nonIdAuthor | Kim, Taekwang | - |
dc.contributor.nonIdAuthor | Lee, Jaewoo | - |
dc.contributor.nonIdAuthor | Im, Sol Yee | - |
dc.contributor.nonIdAuthor | Kwon, Jung Yoon | - |
dc.contributor.nonIdAuthor | Seo, Sunae | - |
dc.contributor.nonIdAuthor | Moon, Seung Eon | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | 3 omega method | - |
dc.subject.keywordAuthor | Al2O3 | - |
dc.subject.keywordAuthor | Atomic layer deposition | - |
dc.subject.keywordAuthor | Thermal boundary resistance | - |
dc.subject.keywordAuthor | Thermal conductivity | - |
dc.subject.keywordPlus | ATOMIC LAYER DEPOSITION | - |
dc.subject.keywordPlus | THIN DIELECTRIC FILMS | - |
dc.subject.keywordPlus | 3-OMEGA METHOD | - |
dc.subject.keywordPlus | CONDUCTANCE | - |
dc.subject.keywordPlus | TRANSPORT | - |
dc.subject.keywordPlus | ALPHA-AL2O3 | - |
dc.subject.keywordPlus | GROWTH | - |
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