Thermal Conductivity and Thermal Boundary Resistances of ALD Al2O3 Films on Si and Sapphire

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On Si and sapphire substrates, 6-45 nm thick films of atomic layerdeposited Al2O3 were grown. The thermal conductivity of ALD films has been determined from a linear relation between film thickness and thermal resistance measured by the 3 omega method. ALD films on Si and sapphire showed almost same thermal conductivity in the temperature range of 50-350 K. Residual thermal resistance was also obtained by extrapolation of the linear fit and was modeled as a sum of the thermal boundary resistances at heater-film and film-substrate interfaces. The total thermal resistance addenda for films on sapphire was close to independently measured thermal boundary resistance of heater-sapphire interface. From the result, it was deduced that the thermal boundary resistance at ALD Al2O3-sapphire interface was much lower than that of heater-film. By contrast, the films on Si showed significantly larger thermal boundary resistance than films on sapphire. Data of < 30 nm films on Si were excluded because an AC coupling of electrical heating voltage to semiconductive Si complicated the relation between 3 omega voltage and temperature.
Publisher
SPRINGER/PLENUM PUBLISHERS
Issue Date
2017-12
Language
English
Article Type
Article
Keywords

ATOMIC LAYER DEPOSITION; THIN DIELECTRIC FILMS; 3-OMEGA METHOD; CONDUCTANCE; TRANSPORT; ALPHA-AL2O3; GROWTH

Citation

INTERNATIONAL JOURNAL OF THERMOPHYSICS, v.38, no.176

ISSN
0195-928X
DOI
10.1007/s10765-017-2308-5
URI
http://hdl.handle.net/10203/228429
Appears in Collection
EE-Journal Papers(저널논문)
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