SOURCE, DRAIN, AND GATE SERIES RESISTANCES AND ELECTRON SATURATION VELOCITY IN ION-IMPLANTED GAAS-FETS

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dc.contributor.authorLEE, KWko
dc.contributor.authorLee, Kwyroko
dc.contributor.authorSHUR, MSko
dc.contributor.authorVU, TTko
dc.contributor.authorROBERTS, PCTko
dc.contributor.authorHELIX, MJko
dc.date.accessioned2011-03-21T07:03:09Z-
dc.date.available2011-03-21T07:03:09Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued1985-
dc.identifier.citationIEEE TRANSACTIONS ON ELECTRON DEVICES, v.32, no.5, pp.987 - 992-
dc.identifier.issn0018-9383-
dc.identifier.urihttp://hdl.handle.net/10203/22841-
dc.description.sponsorshipWe would like to thank R.Jiracek of SRC, Honeywell, for his help in the wafer testing. We also acknowledge useful and fruitful discussions of this work Dr.W.Frensley.en
dc.languageEnglish-
dc.language.isoen_USen
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.titleSOURCE, DRAIN, AND GATE SERIES RESISTANCES AND ELECTRON SATURATION VELOCITY IN ION-IMPLANTED GAAS-FETS-
dc.typeArticle-
dc.identifier.wosidA1985AFM4500020-
dc.identifier.scopusid2-s2.0-0022061068-
dc.type.rimsART-
dc.citation.volume32-
dc.citation.issue5-
dc.citation.beginningpage987-
dc.citation.endingpage992-
dc.citation.publicationnameIEEE TRANSACTIONS ON ELECTRON DEVICES-
dc.identifier.doi10.1109/T-ED.1985.22058-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.contributor.localauthorLee, Kwyro-
dc.contributor.nonIdAuthorLEE, KW-
dc.contributor.nonIdAuthorSHUR, MS-
dc.contributor.nonIdAuthorVU, TT-
dc.contributor.nonIdAuthorROBERTS, PCT-
dc.contributor.nonIdAuthorHELIX, MJ-
dc.type.journalArticleArticle-
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