Functional Circuitry on Commercial Fabric via Textile-Compatible Nanoscale Film Coating Process for Fibertronics

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dc.contributor.authorBae, Hagyoulko
dc.contributor.authorJang, Byung Chulko
dc.contributor.authorPark, Hongkeunko
dc.contributor.authorJung, Soo-Hoko
dc.contributor.authorLee, Hye Moonko
dc.contributor.authorPark, Jun-Youngko
dc.contributor.authorJeon, Seung-Baeko
dc.contributor.authorSon, Gyeonghoko
dc.contributor.authorTcho, Il-Woongko
dc.contributor.authorYu, Kyoungsikko
dc.contributor.authorIm, Sung Gapko
dc.contributor.authorChoi, Sung-Yoolko
dc.contributor.authorChoi, Yang-Kyuko
dc.date.accessioned2017-11-01T11:12:12Z-
dc.date.available2017-11-01T11:12:12Z-
dc.date.created2017-10-24-
dc.date.created2017-10-24-
dc.date.created2017-10-24-
dc.date.issued2017-10-
dc.identifier.citationNANO LETTERS, v.10, no.10, pp.6443 - 6452-
dc.identifier.issn1530-6984-
dc.identifier.urihttp://hdl.handle.net/10203/226673-
dc.description.abstractFabric-based electronic textiles (e-textiles) are the fundamental components of wearable electronic systems, which can provide convenient hand-free access to computer and electronics applications. However, e-textile technologies presently face significant technical challenges. These challenges include difficulties of fabrication due to the delicate nature of the materials, and limited operating time, a consequence of the conventional normally on computing architecture, with volatile power-hungry electronic components, and modest battery storage. Here, we report a novel poly(ethylene glycol dimethacrylate) (pEGDMA)textile memristive nonvolatile logic-in-memory circuit, enabling normally off computing, that can overcome those challenges. To form the metal electrode and resistive switching layer, strands of cotton yarn were coated with aluminum (Al) using a solution dip coating method, and the pEGDMA was conformally applied using an initiated chemical vapor deposition process. The intersection of two Al/pEGDMA coated yarns becomes a unit memristor in the lattice structure. The pEGDMA-Textile Memristor (ETM), a form of crossbar array, was interwoven using a grid of Al/pEGDMA coated yarns and untreated yarns. The former were employed in the active memristor and the latter suppressed cell-to-cell disturbance. We experimentally demonstrated for the first time that the basic Boolean functions, including a half adder as well as NOT, NOR, OR, AND, and NAND logic gates, are successfully implemented with the ETM crossbar array on a fabric substrate. This research may represent a breakthrough development for practical wearable and smart fibertronics.-
dc.languageEnglish-
dc.publisherAMER CHEMICAL SOC-
dc.titleFunctional Circuitry on Commercial Fabric via Textile-Compatible Nanoscale Film Coating Process for Fibertronics-
dc.typeArticle-
dc.identifier.wosid000413057500081-
dc.identifier.scopusid2-s2.0-85031283971-
dc.type.rimsART-
dc.citation.volume10-
dc.citation.issue10-
dc.citation.beginningpage6443-
dc.citation.endingpage6452-
dc.citation.publicationnameNANO LETTERS-
dc.identifier.doi10.1021/acs.nanolett.7b03435-
dc.contributor.localauthorYu, Kyoungsik-
dc.contributor.localauthorIm, Sung Gap-
dc.contributor.localauthorChoi, Sung-Yool-
dc.contributor.localauthorChoi, Yang-Kyu-
dc.contributor.nonIdAuthorJung, Soo-Ho-
dc.contributor.nonIdAuthorLee, Hye Moon-
dc.contributor.nonIdAuthorPark, Jun-Young-
dc.contributor.nonIdAuthorTcho, Il-Woong-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorTextile memristor-
dc.subject.keywordAuthorfabric-
dc.subject.keywordAuthorfibertronics-
dc.subject.keywordAuthorinitiated chemical vapor deposition method-
dc.subject.keywordAuthorsolution dip coating method-
dc.subject.keywordPlusMEMRISTOR-AIDED LOGIC-
dc.subject.keywordPlusTRIBOELECTRIC NANOGENERATOR-
dc.subject.keywordPlusWEARABLE ELECTRONICS-
dc.subject.keywordPlusSHOE INSOLE-
dc.subject.keywordPlusENERGY-
dc.subject.keywordPlusDEVICES-
dc.subject.keywordPlusMEMORY-
dc.subject.keywordPlusSUPERCAPACITORS-
dc.subject.keywordPlusOPERATIONS-
dc.subject.keywordPlusSTORAGE-
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