Precise study of contact resistance lowering mechanism in MoS2 FET with refined resistance network model
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 박지훈 | ko |
| dc.contributor.author | 최성율 | ko |
| dc.contributor.author | 우영진 | ko |
| dc.contributor.author | 서승범 | ko |
| dc.date.accessioned | 2017-09-25T02:44:17Z | - |
| dc.date.available | 2017-09-25T02:44:17Z | - |
| dc.date.created | 2017-09-12 | - |
| dc.date.issued | 2017-04-06 | - |
| dc.identifier.citation | 제 4회 한국 그래핀 심포지엄 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/225911 | - |
| dc.language | English | - |
| dc.publisher | 제 4회 한국 그래핀 심포지엄 | - |
| dc.title | Precise study of contact resistance lowering mechanism in MoS2 FET with refined resistance network model | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.publicationname | 제 4회 한국 그래핀 심포지엄 | - |
| dc.identifier.conferencecountry | KO | - |
| dc.identifier.conferencelocation | 부여 롯데리조트 | - |
| dc.contributor.nonIdAuthor | 최성율 | - |
| dc.contributor.nonIdAuthor | 우영진 | - |
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