Precise study of contact resistance lowering mechanism in MoS2 FET with refined resistance network model

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dc.contributor.author박지훈ko
dc.contributor.author최성율ko
dc.contributor.author우영진ko
dc.contributor.author서승범ko
dc.date.accessioned2017-09-25T02:44:17Z-
dc.date.available2017-09-25T02:44:17Z-
dc.date.created2017-09-12-
dc.date.issued2017-04-06-
dc.identifier.citation제 4회 한국 그래핀 심포지엄-
dc.identifier.urihttp://hdl.handle.net/10203/225911-
dc.languageEnglish-
dc.publisher제 4회 한국 그래핀 심포지엄-
dc.titlePrecise study of contact resistance lowering mechanism in MoS2 FET with refined resistance network model-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.publicationname제 4회 한국 그래핀 심포지엄-
dc.identifier.conferencecountryKO-
dc.identifier.conferencelocation부여 롯데리조트-
dc.contributor.nonIdAuthor최성율-
dc.contributor.nonIdAuthor우영진-
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