Floating gate memory based on MoS2 channel and iCVD polymer dielectric with metal nanoparticle charge trapping layer
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 우명훈 | ko |
| dc.contributor.author | 최성율 | ko |
| dc.contributor.author | 장병철 | ko |
| dc.contributor.author | 최준환 | ko |
| dc.contributor.author | 신광혁 | ko |
| dc.contributor.author | 성혜정 | ko |
| dc.contributor.author | 임성갑 | ko |
| dc.date.accessioned | 2017-09-25T02:44:09Z | - |
| dc.date.available | 2017-09-25T02:44:09Z | - |
| dc.date.created | 2017-09-12 | - |
| dc.date.issued | 2017-04-06 | - |
| dc.identifier.citation | 제 4회 한국 그래핀 심포지엄 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/225909 | - |
| dc.language | English | - |
| dc.publisher | 제 4회 한국 그래핀 심포지엄 | - |
| dc.title | Floating gate memory based on MoS2 channel and iCVD polymer dielectric with metal nanoparticle charge trapping layer | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.publicationname | 제 4회 한국 그래핀 심포지엄 | - |
| dc.identifier.conferencecountry | KO | - |
| dc.identifier.conferencelocation | 부여 롯데리조트 | - |
| dc.contributor.localauthor | 임성갑 | - |
| dc.contributor.nonIdAuthor | 우명훈 | - |
| dc.contributor.nonIdAuthor | 최성율 | - |
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