DC Field | Value | Language |
---|---|---|
dc.contributor.author | 윤태식 | ko |
dc.contributor.author | 김택수 | ko |
dc.date.accessioned | 2017-08-23T06:40:34Z | - |
dc.date.available | 2017-08-23T06:40:34Z | - |
dc.date.created | 2017-06-27 | - |
dc.date.created | 2017-06-27 | - |
dc.date.issued | 2017-03 | - |
dc.identifier.citation | 마이크로전자 및 패키징학회지, v.24, no.1, pp.35 - 43 | - |
dc.identifier.issn | 1226-9360 | - |
dc.identifier.uri | http://hdl.handle.net/10203/225498 | - |
dc.description.abstract | The three-dimensional integrated circuit (3D-IC) is a general trend for the miniaturized and high-performance electronic devices. The through-silicon-via (TSV) is the advanced interconnection method to achieve 3D integration, which uses vertical metal via through silicon substrate. However, the TSV based 3D-IC undergoes severe thermo-mechanical stress due to the CTE (coefficient of thermal expansion) mismatch between via and silicon. The thermo-mechanical stress induces mechanical failure on silicon and silicon-via interface, which reduces the device reliability. In this paper, the thermo-mechanical reliability of TSV based 3D-IC is reviewed in terms of mechanical fracture, heat conduction, and material characteristic. Furthermore, the state of the art via-level and package-level design techniques are introduced to improve the reliability of TSV based 3D-IC. | - |
dc.language | Korean | - |
dc.publisher | 한국마이크로전자및패키징학회 | - |
dc.subject | Through-Silicon-Via | - |
dc.subject | Coefficient of Thermal Expansion | - |
dc.subject | Thermal conductivity | - |
dc.subject | Fracture | - |
dc.subject | Reliability | - |
dc.title | TSV 기반 3차원 소자의 열적-기계적 신뢰성 | - |
dc.title.alternative | Thermo-Mechanical Reliability of TSV based 3D-IC | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.citation.volume | 24 | - |
dc.citation.issue | 1 | - |
dc.citation.beginningpage | 35 | - |
dc.citation.endingpage | 43 | - |
dc.citation.publicationname | 마이크로전자 및 패키징학회지 | - |
dc.identifier.kciid | ART002213425 | - |
dc.contributor.localauthor | 김택수 | - |
dc.description.isOpenAccess | N | - |
dc.subject.keywordAuthor | Through-Silicon-Via | - |
dc.subject.keywordAuthor | Coefficient of Thermal Expansion | - |
dc.subject.keywordAuthor | Thermal conductivity | - |
dc.subject.keywordAuthor | Fracture | - |
dc.subject.keywordAuthor | Reliability | - |
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