Temperature-dependent characteristics of InP-RTD-based microwave amplifier IC

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dc.contributor.authorLee, Jongwonko
dc.contributor.authorYang, Kyoung-Hoonko
dc.date.accessioned2017-08-16T08:52:54Z-
dc.date.available2017-08-16T08:52:54Z-
dc.date.created2017-08-14-
dc.date.created2017-08-14-
dc.date.issued2017-07-
dc.identifier.citationELECTRONICS LETTERS, v.53, no.15, pp.1058 - 1059-
dc.identifier.issn0013-5194-
dc.identifier.urihttp://hdl.handle.net/10203/225329-
dc.description.abstractA reflection-type microwave amplifier using InP-based resonant tunnelling diodes (RTDs) has been designed and fabricated. The implemented amplifier shows a low dc-power consumption of 270 mu W with RF gains of more than 11 dB at 5.61 GHz. Temperature-dependent characteristics of the RTD amplifier have been investigated at a high temperature. With increasing temperature from 25 to 100 degrees C, the centre frequency shift was measured to be 60 MHz. The RF gains (S-21/S-12) and the return losses (S-11/S-22) of the amplifier decreased from 11.45/11.32 and -7.96/-8.11 dB at 25 degrees C to 7.06/6.91 and -11.36/-11.15 dB at 100 degrees C, respectively. The S-parameter degradation phenomena are shown to mainly arise from the temperature dependence of the negative differential resistance (R-D) characteristic for the fabricated RTD.-
dc.languageEnglish-
dc.publisherINST ENGINEERING TECHNOLOGY-IET-
dc.subjectFILTERS-
dc.titleTemperature-dependent characteristics of InP-RTD-based microwave amplifier IC-
dc.typeArticle-
dc.identifier.wosid000406149300035-
dc.identifier.scopusid2-s2.0-85025838756-
dc.type.rimsART-
dc.citation.volume53-
dc.citation.issue15-
dc.citation.beginningpage1058-
dc.citation.endingpage1059-
dc.citation.publicationnameELECTRONICS LETTERS-
dc.identifier.doi10.1049/el.2017.1157-
dc.contributor.localauthorYang, Kyoung-Hoon-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle-
dc.subject.keywordPlusFILTERS-
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