Flexible, Low-Power Thin-Film Transistors Made of Vapor-Phase Synthesized High-k, Ultrathin Polymer Gate Dielectrics

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A series of high-k, ultrathin copolymer gate dielectrics were synthesized from 2-cyanoethyl acrylate (CEA) and di(ethylene glycol) divinyl ether (DEGDVE) monomers by a free radical polymerization via a one-step, vapor-phase, initiated chemical vapor deposition (iCVD) method. The chemical composition of the copolymers was systematically optimized by tuning the input ratio of the vaporized CEA and DEGDVE monomers to achieve a high dielectric constant (k) as well as excellent dielectric strength. Interestingly, DEGDVE was nonhomopolymerizable but it was able to form a copolymer with other kinds of monomers. Utilizing this interesting property of the DEGDVE cross-linker, the dielectric constant of the copolymer film could be maximized with minimum incorporation of the cross-linker moiety. To our knowledge, this is the first report on the synthesis of a cyanide-containing polymer in the vapor phase, where a high-purity polymer film with a maximized dielectric constant was achieved. The dielectric film with the optimized composition showed a dielectric constant greater than 6 and extremely low leakage current densities (< 3 X 10(-8) A/cm(2) in the range of +/- 2 MV/cm), with a thickness of only 20 nm, which is an outstanding thickness for down-scalable cyanide polymer dielectrics. With this high-k dielectric layer, organic thin-film transistors (OTFTs) and oxide TFTs were fabricated, which showed hysteresis-free transfer characteristics with an operating voltage of less than 3 V. Furthermore, the flexible OTFTs retained their low gate leakage current and ideal TFT characteristics even under 2% applied tensile strain, which makes them some of the most flexible OTFTs reported to date. We believe that these ultrathin, high-k organic dielectric films with excellent mechanical flexibility will play a crucial role in future soft electronics.
Publisher
AMER CHEMICAL SOC
Issue Date
2017-06
Language
English
Article Type
Article
Keywords

FIELD-EFFECT TRANSISTORS; ORGANIC TRANSISTORS; HIGH-PERFORMANCE; INSULATING LAYERS; THRESHOLD VOLTAGE; RECENT PROGRESS; DEPOSITION; ELECTRONICS; CAPACITANCE; STABILITY

Citation

ACS APPLIED MATERIALS &amp; INTERFACES, v.9, no.24, pp.20808 - 20817

ISSN
1944-8244
DOI
10.1021/acsami.7b03537
URI
http://hdl.handle.net/10203/225100
Appears in Collection
CBE-Journal Papers(저널논문)
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