Long-Range Lattice Engineering of MoTe2 by a 2D Electride

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dc.contributor.authorKim, Serako
dc.contributor.authorSong, Seunghyunko
dc.contributor.authorPark, Jonghoko
dc.contributor.authorYu, Ho Sungko
dc.contributor.authorCho, Suyeonko
dc.contributor.authorKim, Dohyunko
dc.contributor.authorBaik, Jaeyoonko
dc.contributor.authorChoe, Duk-Hyunko
dc.contributor.authorChang, Kee Jooko
dc.contributor.authorLee, Young Heeko
dc.contributor.authorKim, Sung Wngko
dc.contributor.authorYANG, HEEJUNko
dc.date.accessioned2017-07-18T06:30:51Z-
dc.date.available2017-07-18T06:30:51Z-
dc.date.created2017-07-10-
dc.date.created2017-07-10-
dc.date.created2017-07-10-
dc.date.issued2017-06-
dc.identifier.citationNANO LETTERS, v.17, no.6, pp.3363 - 3368-
dc.identifier.issn1530-6984-
dc.identifier.urihttp://hdl.handle.net/10203/224867-
dc.description.abstractDoping two-dimensional (2D) semiconductors beyond their degenerate levels provides the opportunity to investigate extreme carrier density-driven superconductivity and phase transition in 2D systems. Chemical functionalization and the ionic gating have achieved the high doping density, but their effective ranges have been limited to similar to 1 nm, which restricts the use of highly doped 2D semiconductors. Here, we report on electron diffusion from the 2D electride [Ca2N](+)e to MoTe2 over a distance of 100 nm from the contact interface, generating an electron doping density higher than 1.6 x 10(14) cm(2) and a lattice symmetry change of MoTe2 as a consequence of the extreme doping. The long-range lattice symmetry change, suggesting a length scale surpassing the depletion width of conventional metalsemiconductor junctions, was a consequence of the low work function (2.6 eV) with highly mobile anionic electron layers of [Ca2N](+)e . The combination of 2D electrides and layered materials yields a novel material design in terms of doping and lattice engineering.-
dc.languageEnglish-
dc.publisherAMER CHEMICAL SOC-
dc.titleLong-Range Lattice Engineering of MoTe2 by a 2D Electride-
dc.typeArticle-
dc.identifier.wosid000403631600006-
dc.identifier.scopusid2-s2.0-85020763070-
dc.type.rimsART-
dc.citation.volume17-
dc.citation.issue6-
dc.citation.beginningpage3363-
dc.citation.endingpage3368-
dc.citation.publicationnameNANO LETTERS-
dc.identifier.doi10.1021/acs.nanolett.6b05199-
dc.contributor.localauthorChang, Kee Joo-
dc.contributor.localauthorYANG, HEEJUN-
dc.contributor.nonIdAuthorKim, Sera-
dc.contributor.nonIdAuthorSong, Seunghyun-
dc.contributor.nonIdAuthorPark, Jongho-
dc.contributor.nonIdAuthorYu, Ho Sung-
dc.contributor.nonIdAuthorCho, Suyeon-
dc.contributor.nonIdAuthorKim, Dohyun-
dc.contributor.nonIdAuthorBaik, Jaeyoon-
dc.contributor.nonIdAuthorLee, Young Hee-
dc.contributor.nonIdAuthorKim, Sung Wng-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorMoTe2-
dc.subject.keywordAuthorelectride-
dc.subject.keywordAuthordoping-
dc.subject.keywordAuthorphase transition-
dc.subject.keywordAuthorelectron diffusion-
dc.subject.keywordAuthorwork function-
dc.subject.keywordPlusTRANSITION-METAL DICHALCOGENIDES-
dc.subject.keywordPlusELECTRONIC-STRUCTURE-
dc.subject.keywordPlusPHASE-TRANSITION-
dc.subject.keywordPlusMOS2-
dc.subject.keywordPlusGRAPHENE-
dc.subject.keywordPlusTRANSISTORS-
dc.subject.keywordPlusMONOLAYER-
dc.subject.keywordPlusFRICTION-
dc.subject.keywordPlusSTRAIN-
dc.subject.keywordPlusLAYER-
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