Water-Soluble Thin Film Transistors and Circuits Based on Amorphous Indium-Gallium-Zinc Oxide

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This paper presents device designs, circuit demonstrations, and dissolution kinetics for amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistors (TFTs) comprised completely of water-soluble materials, including SiNx, SiOx, molybdenum, and poly(vinyl alcohol) (PVA). Collections of these types of physically transient a-IGZO TFTs and 5-stage ring oscillators (ROs), constructed 0 with them, show field effect mobilities (similar to 10 cm(2)/Vs), on/off ratios (similar to 2 x 10(6)), subthreshold slopes (similar to 220 mV/dec), Ohmic contact properties, and oscillation frequency of 5:67 kHz at supply voltages of 19 V, all comparable to otherwise similar devices constructed in conventional ways with standard, nontransient materials. Studies of dissolution kinetics for a-IGZO films in deionized water, bovine serum, and phosphate buffer saline solution provide data of relevance for the potential use of these materials and this technology in temporary biomedical implants.
Publisher
AMER CHEMICAL SOC
Issue Date
2015-04
Language
English
Article Type
Article
Keywords

TRANSIENT ELECTRONICS; FABRICATION; BIOCOMPATIBILITY; CYTOTOXICITY; BIOMATERIAL; TOXICITY; POLYMERS; ZNO

Citation

ACS APPLIED MATERIALS & INTERFACES, v.7, pp.8268 - 8274

ISSN
1944-8244
DOI
10.1021/acsami.5b00086
URI
http://hdl.handle.net/10203/224814
Appears in Collection
BiS-Journal Papers(저널논문)
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