DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, TaeWan | ko |
dc.contributor.author | Kim, Dongbin | ko |
dc.contributor.author | Kim, Yong-Sung | ko |
dc.contributor.author | Park, Hyun Sang | ko |
dc.contributor.author | Lim, Sung Kyu | ko |
dc.contributor.author | Park, Keun Oh. | ko |
dc.contributor.author | Kim, Taesung | ko |
dc.contributor.author | Kang, Sang-Woo | ko |
dc.date.accessioned | 2017-07-04T02:26:14Z | - |
dc.date.available | 2017-07-04T02:26:14Z | - |
dc.date.created | 2017-06-27 | - |
dc.date.created | 2017-06-27 | - |
dc.date.created | 2017-06-27 | - |
dc.date.issued | 2016-10 | - |
dc.identifier.citation | DIAMOND AND RELATED MATERIALS, v.69, pp.102 - 107 | - |
dc.identifier.issn | 0925-9635 | - |
dc.identifier.uri | http://hdl.handle.net/10203/224572 | - |
dc.description.abstract | Nitrogen- and boron-doped amorphous carbon layers (ACLs) were grown by plasma- enhanced chemical vapor deposition (PECVD) on a Si substrate and characterized by Raman and X-ray photoelectron spectroscopy (XPS) techniques. Increasing doping levels resulted in a shift in the Raman G-peak of the doped ALCs, indicating a change in bond lengths upon doping. The XPS N1s and B1s spectra revealed the presence of different types of N-related (involving pyridinic, pynolinic, and graphitic N) and B-related (corresponding to BC2O and B-C species) bonds in the N- and B-doped ACLs, with N and B doping levels ranging from 2.03 to 3.94 at% and from 1.44 to 10.4 at%, respectively. These results suggest that the dry etch resistance of the present ACLs was enhanced by B doping and negatively affected by N doping. Density functional theory calculations highlighted the strengthening of C-C bonds induced by B doping and their corresponding weakening caused by N doping as possible explanations for the effects of doping on the dry etching characteristics of the ACLs. (C) 2016 Published by Elsevier B.V. | - |
dc.language | English | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.title | Strain-controlled boron and nitrogen doping of amorphous carbon layers for hard mask applications | - |
dc.type | Article | - |
dc.identifier.wosid | 000385602000014 | - |
dc.identifier.scopusid | 2-s2.0-84982291645 | - |
dc.type.rims | ART | - |
dc.citation.volume | 69 | - |
dc.citation.beginningpage | 102 | - |
dc.citation.endingpage | 107 | - |
dc.citation.publicationname | DIAMOND AND RELATED MATERIALS | - |
dc.identifier.doi | 10.1016/j.diamond.2016.08.002 | - |
dc.contributor.nonIdAuthor | Kim, TaeWan | - |
dc.contributor.nonIdAuthor | Kim, Dongbin | - |
dc.contributor.nonIdAuthor | Kim, Yong-Sung | - |
dc.contributor.nonIdAuthor | Lim, Sung Kyu | - |
dc.contributor.nonIdAuthor | Park, Keun Oh. | - |
dc.contributor.nonIdAuthor | Kim, Taesung | - |
dc.contributor.nonIdAuthor | Kang, Sang-Woo | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Amorphous carbon layer | - |
dc.subject.keywordAuthor | Strain-control | - |
dc.subject.keywordAuthor | Dopant | - |
dc.subject.keywordAuthor | Diborane | - |
dc.subject.keywordAuthor | Ammonia | - |
dc.subject.keywordPlus | AUGMENTED-WAVE METHOD | - |
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