High-Performance Graphene Field-Effect-Transistors with iCVD Gate Dielectrics and Flexible Radio-Frequency Circuit Application

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dc.contributor.author오중건ko
dc.contributor.author봉재훈ko
dc.contributor.author김충선ko
dc.contributor.author박관용ko
dc.contributor.author황완식ko
dc.contributor.author임성갑ko
dc.contributor.author조병진ko
dc.date.accessioned2017-07-03T06:49:07Z-
dc.date.available2017-07-03T06:49:07Z-
dc.date.created2017-06-22-
dc.date.created2017-06-22-
dc.date.issued2017-04-06-
dc.identifier.citationThe 4th Korean Graphene Symposium-
dc.identifier.urihttp://hdl.handle.net/10203/224336-
dc.languageEnglish-
dc.publisher한국그래핀연구회-
dc.titleHigh-Performance Graphene Field-Effect-Transistors with iCVD Gate Dielectrics and Flexible Radio-Frequency Circuit Application-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.publicationnameThe 4th Korean Graphene Symposium-
dc.identifier.conferencecountryKO-
dc.identifier.conferencelocationBuyeo Lotte Resort-
dc.contributor.localauthor임성갑-
dc.contributor.localauthor조병진-
dc.contributor.nonIdAuthor황완식-
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