DC Field | Value | Language |
---|---|---|
dc.contributor.author | Bae, Hagyoul | ko |
dc.contributor.author | Bang, Tewook | ko |
dc.contributor.author | Kim, Choong-Ki | ko |
dc.contributor.author | Hur, Jae | ko |
dc.contributor.author | Kim, Seyeob | ko |
dc.contributor.author | Jeon, Chang-Hoon | ko |
dc.contributor.author | Park, Jun-Young | ko |
dc.contributor.author | Ahn, Dae-Chul | ko |
dc.contributor.author | Kim, Gun-Hee | ko |
dc.contributor.author | Son, Yunik | ko |
dc.contributor.author | Lee, Jae-Hoon | ko |
dc.contributor.author | Kim, Yong-Taik | ko |
dc.contributor.author | Ryu, Seong-Wan | ko |
dc.contributor.author | Choi, Yang-Kyu | ko |
dc.date.accessioned | 2017-05-15T05:17:30Z | - |
dc.date.available | 2017-05-15T05:17:30Z | - |
dc.date.created | 2017-05-02 | - |
dc.date.created | 2017-05-02 | - |
dc.date.issued | 2017-05 | - |
dc.identifier.citation | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.17, no.5, pp.3247 - 3250 | - |
dc.identifier.issn | 1533-4880 | - |
dc.identifier.uri | http://hdl.handle.net/10203/223654 | - |
dc.description.abstract | We report an accurate extraction technique of effective mobility (mu(eff)) by considering gate-bias (V-GS) dependent effective inversion charges (Q(inv,eff)) as a normalized correction factor (sigma(V-GS)) when using the gate-to-source/drain capacitance-voltage (C-V) measurement in a p-channel Si/SiGe MOSFET with a floating body structure. In the proposed technique, two different capacitance-voltage configurations: a gate-to-source/drain (CG-SD) configuration without body contact and a gate-to-source/drain/body (CG-SDB) configuration with body contact are utilized for the accurate extraction of mu(eff). | - |
dc.language | English | - |
dc.publisher | AMER SCIENTIFIC PUBLISHERS | - |
dc.subject | CHANNEL | - |
dc.subject | ENHANCEMENT | - |
dc.subject | DIELECTRICS | - |
dc.title | Improved Technique for Extraction of Effective Mobility by Considering Gate Bias-Dependent Inversion Charges in a Floating-Body Si/SiGe pMOSFET | - |
dc.type | Article | - |
dc.identifier.wosid | 000397855000064 | - |
dc.identifier.scopusid | 2-s2.0-85015329432 | - |
dc.type.rims | ART | - |
dc.citation.volume | 17 | - |
dc.citation.issue | 5 | - |
dc.citation.beginningpage | 3247 | - |
dc.citation.endingpage | 3250 | - |
dc.citation.publicationname | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
dc.identifier.doi | 10.1166/jnn.2017.14035 | - |
dc.contributor.localauthor | Choi, Yang-Kyu | - |
dc.contributor.nonIdAuthor | Bang, Tewook | - |
dc.contributor.nonIdAuthor | Kim, Seyeob | - |
dc.contributor.nonIdAuthor | Park, Jun-Young | - |
dc.contributor.nonIdAuthor | Ahn, Dae-Chul | - |
dc.contributor.nonIdAuthor | Kim, Gun-Hee | - |
dc.contributor.nonIdAuthor | Son, Yunik | - |
dc.contributor.nonIdAuthor | Lee, Jae-Hoon | - |
dc.contributor.nonIdAuthor | Kim, Yong-Taik | - |
dc.contributor.nonIdAuthor | Ryu, Seong-Wan | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | SiGe MOSFET | - |
dc.subject.keywordAuthor | Effective Mobility | - |
dc.subject.keywordAuthor | Split C-V Method | - |
dc.subject.keywordAuthor | Empirical Modeling | - |
dc.subject.keywordAuthor | Effective Inversion Channel | - |
dc.subject.keywordPlus | CHANNEL | - |
dc.subject.keywordPlus | ENHANCEMENT | - |
dc.subject.keywordPlus | DIELECTRICS | - |
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