DC Field | Value | Language |
---|---|---|
dc.contributor.author | You, Jong-Bum | ko |
dc.contributor.author | Kwon, Hyeokbin | ko |
dc.contributor.author | Kim, Jonghoon | ko |
dc.contributor.author | Park, Hyo-Hoon | ko |
dc.contributor.author | Yu, Kyoungsik | ko |
dc.date.accessioned | 2017-05-08T08:49:40Z | - |
dc.date.available | 2017-05-08T08:49:40Z | - |
dc.date.created | 2017-04-18 | - |
dc.date.created | 2017-04-18 | - |
dc.date.issued | 2017-02 | - |
dc.identifier.citation | OPTICS EXPRESS, v.25, no.4, pp.4284 - 4296 | - |
dc.identifier.issn | 1094-4087 | - |
dc.identifier.uri | http://hdl.handle.net/10203/223546 | - |
dc.description.abstract | We demonstrate silicon ridge waveguide photo-detectors capable of sub-bandgap light absorption and avalanche multiplication. The proposed waveguide photo-detectors contain highly doped PN junction, where a strong electric field can generate the photon-assisted tunneling current for sub-bandgap light incidence and amplify the generated photocurrent by the avalanche multiplication effect. The voltage-dependent sub-bandgap absorption coefficient and multiplication gain are experimentally evaluated for various doping configurations to find optimal photo-response with low dark currents. As a result, our representative silicon waveguide photo-detector gives sub-bandgap responsivities of similar to 10 and similar to 2 A/W under the applied reverse bias voltage of -8.3 V for near-infrared wavelengths of 1.31 and 1.52 mu m, respectively. The voltage-dependent frequency photo-response is also demonstrated with theoretical verification. (C) 2017 Optical Society of America | - |
dc.language | English | - |
dc.publisher | OPTICAL SOC AMER | - |
dc.subject | ALL-SILICON | - |
dc.subject | INFRARED PHOTODIODES | - |
dc.subject | INTRINSIC SILICON | - |
dc.subject | EMITTING-DIODES | - |
dc.subject | 300 K | - |
dc.subject | PHOTODETECTORS | - |
dc.subject | TEMPERATURE | - |
dc.title | Photon-assisted tunneling for sub-bandgap light detection in silicon PN-doped waveguides | - |
dc.type | Article | - |
dc.identifier.wosid | 000397317400125 | - |
dc.identifier.scopusid | 2-s2.0-85013466493 | - |
dc.type.rims | ART | - |
dc.citation.volume | 25 | - |
dc.citation.issue | 4 | - |
dc.citation.beginningpage | 4284 | - |
dc.citation.endingpage | 4296 | - |
dc.citation.publicationname | OPTICS EXPRESS | - |
dc.identifier.doi | 10.1364/OE.25.004284 | - |
dc.contributor.localauthor | Park, Hyo-Hoon | - |
dc.contributor.localauthor | Yu, Kyoungsik | - |
dc.contributor.nonIdAuthor | Kwon, Hyeokbin | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | ALL-SILICON | - |
dc.subject.keywordPlus | INFRARED PHOTODIODES | - |
dc.subject.keywordPlus | INTRINSIC SILICON | - |
dc.subject.keywordPlus | EMITTING-DIODES | - |
dc.subject.keywordPlus | 300 K | - |
dc.subject.keywordPlus | PHOTODETECTORS | - |
dc.subject.keywordPlus | TEMPERATURE | - |
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