DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Tae-Hyo | ko |
dc.contributor.author | Lee, Hee Chul | ko |
dc.date.accessioned | 2017-04-17T07:41:56Z | - |
dc.date.available | 2017-04-17T07:41:56Z | - |
dc.date.created | 2017-04-04 | - |
dc.date.created | 2017-04-04 | - |
dc.date.created | 2017-04-04 | - |
dc.date.issued | 2017-01 | - |
dc.identifier.citation | IEEE TRANSACTIONS ON NUCLEAR SCIENCE, v.64, no.1, pp.648 - 653 | - |
dc.identifier.issn | 0018-9499 | - |
dc.identifier.uri | http://hdl.handle.net/10203/223343 | - |
dc.description.abstract | A 12-bit 40kS/s successive approximation register analog-to-digital converter (ADC) designed with a dummy gate-assisted (DGA) n-MOSFET is presented for space applications requiring high resolution, low power consumption, and moderate conversion speed. Additionally, a custom-designed metal finger capacitor and a body-tied p-MOSFET protected by guard ring in a bootstrapping circuit were used to mitigate the performance degradation caused by radiation-induced leakage current. The designed ADC was fabricated in a commercial standard 0.35 mu m CMOS process. In order to evaluate its radiation hardness, the fabricated ADC was exposed to Co-60 gamma rays with a dose of up to 300krad (Si). The measured signal-to-noise-and-distortion ratio (SNDR) and spurious-free dynamic range (SFDR) were 67.9dB and 78.7dB, respectively. Although a small amount of degradation of the SNDR was observed after radiation exposure, it corresponds to only about a 0.1 effective-number-of-bit (ENOB) drop from the measured result of an unirradiated chip. | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | CMOS TECHNOLOGIES | - |
dc.subject | RADIATION | - |
dc.subject | CONVERTERS | - |
dc.subject | CIRCUITS | - |
dc.subject | READOUT | - |
dc.title | Total Ionizing Dose Effects on a 12-bit 40kS/s SAR ADC Designed With a Dummy Gate-Assisted n-MOSFET | - |
dc.type | Article | - |
dc.identifier.wosid | 000396814100003 | - |
dc.identifier.scopusid | 2-s2.0-85015916456 | - |
dc.type.rims | ART | - |
dc.citation.volume | 64 | - |
dc.citation.issue | 1 | - |
dc.citation.beginningpage | 648 | - |
dc.citation.endingpage | 653 | - |
dc.citation.publicationname | IEEE TRANSACTIONS ON NUCLEAR SCIENCE | - |
dc.identifier.doi | 10.1109/TNS.2016.2631723 | - |
dc.contributor.localauthor | Lee, Hee Chul | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Dummy gate-assisted n-MOSFET | - |
dc.subject.keywordAuthor | radiation hardening | - |
dc.subject.keywordAuthor | successive approximation register (SAR) ADC | - |
dc.subject.keywordAuthor | total ionizing dose effects | - |
dc.subject.keywordPlus | CMOS TECHNOLOGIES | - |
dc.subject.keywordPlus | RADIATION | - |
dc.subject.keywordPlus | CONVERTERS | - |
dc.subject.keywordPlus | CIRCUITS | - |
dc.subject.keywordPlus | READOUT | - |
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